A study of multi-quantum barriers for long-wavelength semiconductor lasers using strain-compensated superlattices 歪補償超格子を用いる長波長半導体レーザ用多重量子障壁に関する研究

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著者

    • 羅, 徳厚 ロー, ターホ

書誌事項

タイトル

A study of multi-quantum barriers for long-wavelength semiconductor lasers using strain-compensated superlattices

タイトル別名

歪補償超格子を用いる長波長半導体レーザ用多重量子障壁に関する研究

著者名

羅, 徳厚

著者別名

ロー, ターホ

学位授与大学

東京工業大学

取得学位

博士 (工学)

学位授与番号

甲第3356号

学位授与年月日

1996-09-30

注記・抄録

博士論文

目次

  1. 論文目録 / (0001.jp2)
  2. Table of Contents / (0005.jp2)
  3. Chapter 1 Introduction / p1 (0008.jp2)
  4. 1.1 Background / p1 (0008.jp2)
  5. 1.2 Objectives of this study / p6 (0013.jp2)
  6. References / p8 (0015.jp2)
  7. Chapter 2 Physical Understanding of Multi-Quantum Barriers(MQB) / p15 (0022.jp2)
  8. 2.1 Reflectivity Calculation by Scattering Matrix / p15 (0022.jp2)
  9. 2.2 Basic Problems in GaInAs(P)/InP Multi-Qunatum Barriers / p19 (0026.jp2)
  10. 2.3 Effect of Inelastic Scattering in GaInAs(P)/InP MQB / p21 (0028.jp2)
  11. 2.4 Effect of Interface Roughness on the Effectiveness of MQB / p31 (0038.jp2)
  12. 2.5 Current Against Voltage Characteristics of Multi-Quantum Barriers in Double Heterostructure Diode / p35 (0042.jp2)
  13. References / p37 (0044.jp2)
  14. Chapter 3 Design of Multi-Quantum Barriers For Long-Wavelength Semiconductor Lasers / p39 (0046.jp2)
  15. 3.1 Two (single) cavity strain-compensated MQB as means to increase virtual barrier / p39 (0046.jp2)
  16. 3.2 Design of Two-Cavity Strain-Compensated Multi-Quantum Barriers / p41 (0048.jp2)
  17. 3.3 Design of GaInAs/GaInP Strain-Compensated Multi-Quantum Barriers / p46 (0053.jp2)
  18. References / p50 (0057.jp2)
  19. Chapter 4 Chemical Beam Epitaxial Growth of GalnAs/GalnP Superlattices For Multi-Quantum Barriers / p52 (0059.jp2)
  20. 4.1 Chemical Beam Epitaxy / p52 (0059.jp2)
  21. 4.2 Chemical Beam Epitaxy System and Growth Mechanism / p57 (0064.jp2)
  22. 4.3 Growth and Characterization of InP and GaInAsP Based Epitaxy / p60 (0067.jp2)
  23. 4.4 CBE Growth and Characterization of GalnAs/GalnP Strain-Compensated Short-Period Superlattice / p65 (0072.jp2)
  24. References / p71 (0078.jp2)
  25. Chapter 5 Chemical Epitaxial Growth of InAsP/ InP/ GaInP Superlattices For Multi-Quantum Barriers / p73 (0080.jp2)
  26. 5.1 Design of InAsP/InP/GaInP Multi-Quantum Barriers / p73 (0080.jp2)
  27. 5.2 CBE Growth and Characterization of Strain-Balanced InAsP/InP/GalnP Short-Period Superlattice / p79 (0086.jp2)
  28. 5.3 Current-Voltage Characteristics of MQB Loaded pn-Homojunction / p88 (0095.jp2)
  29. References / p90 (0097.jp2)
  30. Chapter 6 Characterization of Multi-Quantum Barriers Loaded Light Emitting Devices / p92 (0099.jp2)
  31. 6.1 CBE Grown Laser Wafer Loaded With InAsP/InP/GainP Multi-Quantum Barriers / p92 (0099.jp2)
  32. 6.2 Broad Area Stripe Laser Processing and Characterizations / p95 (0102.jp2)
  33. 6.3 Bottom Emitting Light Emitting Diode Processing and Characterizations / p101 (0108.jp2)
  34. 6.4 Characteristics of Bottom Emitting Light Emitting Diode Loaded With MQB / p104 (0111.jp2)
  35. References / p107 (0114.jp2)
  36. Chapter 7 Conclusion / p108 (0115.jp2)
  37. Appendix / p111 (0118.jp2)
  38. Acknowledgement / p126 (0132.jp2)
  39. List of Publications / p127 (0133.jp2)
  40. 主論文要旨(和文) / (0135.jp2)
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各種コード

  • NII論文ID(NAID)
    500000153558
  • NII著者ID(NRID)
    • 8000001087590
  • DOI(NDL)
  • NDL書誌ID
    • 000000317872
  • データ提供元
    • NDL-OPAC
    • NDLデジタルコレクション
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