Study of carbon doped n-type InP and its application to heterojunction bipolar transistors (HBTs) カーボンドープn形Inpとヘテロ接合バイポーラトランジスターへの応用に関する研究
この論文にアクセスする
この論文をさがす
著者
書誌事項
- タイトル
-
Study of carbon doped n-type InP and its application to heterojunction bipolar transistors (HBTs)
- タイトル別名
-
カーボンドープn形Inpとヘテロ接合バイポーラトランジスターへの応用に関する研究
- 著者名
-
呉, 済煥
- 著者別名
-
オー, ジェホアン
- 学位授与大学
-
東京工業大学
- 取得学位
-
博士 (工学)
- 学位授与番号
-
甲第3452号
- 学位授与年月日
-
1997-03-26
注記・抄録
博士論文
目次
- 論文目録 / (0002.jp2)
- TABLE OF CONTENTS / (0004.jp2)
- Chapter 1 Overview and Objective of This Study / p1 (0005.jp2)
- Chapter 2 Key Features and Related Issues for InP-based Heterojunction Bipolar Transistors(HBTs) / p6 (0008.jp2)
- 2-1.Introduction / p6 (0008.jp2)
- 2-2.Basic Device Concepts and Available Material Systems / p8 (0009.jp2)
- 2-3.Device Characteristics and Related Issues / p14 (0012.jp2)
- 2-4.Issues for Improvement of Device Reliability / p22 (0016.jp2)
- 2-5.Summary and Prospects / p28 (0019.jp2)
- Chapter 3 Metalorganic Molecular Beam Epitaxy of Heavily Carbon Doped InP Using Tertiarybutylphosphine (TBP) / p30 (0020.jp2)
- 3-1.Introduction / p30 (0020.jp2)
- 3-2.Experimental Procedure / p33 (0021.jp2)
- 3-3.Growth and Characterization of Heavily Carbon Doped InP / p39 (0024.jp2)
- 3-4.Carbon Doping Characteristics for MOMBE of Heavily Carbon Doped InP Using TBP / p56 (0033.jp2)
- 3-5.Summary / p71 (0040.jp2)
- Chapter 4 Characterization of Carbon Doped n-type InP by Raman Spectroscopy / p73 (0041.jp2)
- 4-1.Introduction / p73 (0041.jp2)
- 4-2.Experimental Procedure / p75 (0042.jp2)
- 4-3.Characterization of Heavily Carbon Doped InP by Local Vibration Mode / p76 (0043.jp2)
- 4-4.Characterization of Heavily Carbon Doped InP by Plasmon-LO Phonon Coupled Mode / p90 (0050.jp2)
- 4-5.Summary / p96 (0053.jp2)
- Chapter 5 Metalorganic Molecular Beam Epitaxy of Heavily Carbon Doped InGaAs Using Trimethylgallium(TMG) / p98 (0054.jp2)
- 5-1.Introduction / p98 (0054.jp2)
- 5-2.Experimental Procedure / p100 (0055.jp2)
- 5-3.Carbon Doping Characteristics for MOMBE of InGaAs Using TMG / p102 (0056.jp2)
- 5-4.Growth Kinetics for MOMBE of Heavily Carbon Doped InGaAs and Control of In Molar Fraction / p110 (0060.jp2)
- 5-5.Summary / p134 (0072.jp2)
- Chapter 6 Stability of Carbon in III-V Compound Semiconductors / p136 (0073.jp2)
- 6-1.Introduction / p136 (0073.jp2)
- 6-2.Diffusion Behavior of Carbon in GaAs / p138 (0074.jp2)
- 6-3.Carbon in InP / p151 (0080.jp2)
- 6-4.Summary / p155 (0082.jp2)
- Chapter 7 Application of Carbon Doped n-type InP to Heavily Carbon Doped Base InP/InGaAs HBTs / p156 (0083.jp2)
- 7-1.Introduction / p156 (0083.jp2)
- 7-2.Experimental Procedure / p159 (0084.jp2)
- 7-3.DC Characteristics / p166 (0088.jp2)
- 7-4.Summary / p172 (0091.jp2)
- Chapter 8 General Conclusions / p173 (0091.jp2)
- Acknowledgments / p178 (0094.jp2)
- References / p180 (0095.jp2)
- List of Publications / p194 (0102.jp2)
