Analytical models for shallow base bipolar transistors and deep submicron double-gate SOI MOSFETs 浅いベース接合を持つバイポーラトランジスタならびに二重ゲート微細SOI MOSFETsに関する解析モデル

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著者

    • 鈴木, 邦広 スズキ, クニヒロ

書誌事項

タイトル

Analytical models for shallow base bipolar transistors and deep submicron double-gate SOI MOSFETs

タイトル別名

浅いベース接合を持つバイポーラトランジスタならびに二重ゲート微細SOI MOSFETsに関する解析モデル

著者名

鈴木, 邦広

著者別名

スズキ, クニヒロ

学位授与大学

東京工業大学

取得学位

博士 (工学)

学位授与番号

乙第2908号

学位授与年月日

1996-05-31

注記・抄録

博士論文

目次

  1. 論文目録 / (0002.jp2)
  2. I.Introduction / p4 (0005.jp2)
  3. II.Models for polysilicon emitter contact bipolar transistors in low-injection regime / p12 (0009.jp2)
  4. II-1.Introduction / p12 (0009.jp2)
  5. II-2.Base current model considering polysilicon emitter contact / p14 (0010.jp2)
  6. II-3.Collector current model considering velocity saturation at base-collector junction / p24 (0015.jp2)
  7. II-4.Emitter and base transit times of polysilicon emitter contact bipolar transistors / p34 (0020.jp2)
  8. II-5.Tradeoff between cutoff frequency and base resistance for the ECL propagation delay time / p47 (0026.jp2)
  9. II-6.Summary / p57 (0031.jp2)
  10. References / p59 (0032.jp2)
  11. III.Models for bipolar transistors in high-injection regime / p64 (0035.jp2)
  12. III-1.Introduction / p64 (0035.jp2)
  13. III-2.Collector current and base transit time models of uniformly doped base transistors / p65 (0035.jp2)
  14. III-3.Collector current and base transit time models of arbitrarily doped base transistors / p77 (0041.jp2)
  15. III-4.Influence of emitter current crowding and base resistivity modulation on base resistance / p91 (0048.jp2)
  16. III-5.Summary / p95 (0050.jp2)
  17. References / p96 (0051.jp2)
  18. IV.Models for double-gate SOI MOSFET / p97 (0051.jp2)
  19. IV-1.Introduction / p97 (0051.jp2)
  20. IV-2.Numerical analysis of potential distribution of double-gate SOI MOSFETs / p99 (0052.jp2)
  21. IV-3.Threshold voltage model / p103 (0054.jp2)
  22. IV-4.Subthreshold swing model / p107 (0056.jp2)
  23. IV-5.Drain current model / p109 (0057.jp2)
  24. IV-6.Scaling theory / p112 (0059.jp2)
  25. IV-7.Summary / p121 (0063.jp2)
  26. References / p122 (0064.jp2)
  27. V.Models for n⁺-p⁺ double-gate SOI MOSFET / p124 (0065.jp2)
  28. V-l.Introduction / p124 (0065.jp2)
  29. V-2.Threshold voltage model derivation using geometrical potential analysis / p126 (0066.jp2)
  30. V-3.Conductive charge concentration model / p130 (0068.jp2)
  31. V-4.Drain current model / p133 (0069.jp2)
  32. V-5.Scaling theory / p135 (0070.jp2)
  33. V-6.Comparison with experimental data / p145 (0075.jp2)
  34. V-7.Summary / p148 (0077.jp2)
  35. References / p149 (0077.jp2)
  36. VI.Fabrication of n⁺-p⁺ double-gate SOI MOSFET / p153 (0079.jp2)
  37. VI-1.Introduction / p153 (0079.jp2)
  38. VI-2.Fabrication process / p154 (0080.jp2)
  39. VI-3.Device characteristics / p157 (0081.jp2)
  40. VI-4.Theoretical study of 0.1-μm-[数式] device / p164 (0085.jp2)
  41. VI-5.Self-align process / p169 (0087.jp2)
  42. VI-6.Summary / p173 (0089.jp2)
  43. References / p174 (0090.jp2)
  44. VII.Summary / p176 (0091.jp2)
  45. VII-1.Summary of this paper / p176 (0091.jp2)
  46. VII-2.Future trend / p178 (0092.jp2)
  47. References / p182 (0094.jp2)
  48. Appendix.Model for heavily doped polycrystalline silicon / p188 (0097.jp2)
  49. A-1.Introduction / p188 (0097.jp2)
  50. A-2.Redistribution of impurities during thermal oxidation of polycrystalline silicon / p189 (0097.jp2)
  51. A-3.Segregation coefficient of boron and arsenic at polycrystalline silicon/SiO₂ interface / p200 (0103.jp2)
  52. A-4.Resistivity of heavily doped polycrystalline silicon / p212 (0109.jp2)
  53. A-5.Thermal budget for fabricating p⁺ polysilicon gates / p222 (0114.jp2)
  54. A-6.Summary / p233 (0119.jp2)
  55. References / p235 (0120.jp2)
  56. Acknowledgment / p239 (0122.jp2)
  57. List of papers and conference presentations associated with this work / p241 (0123.jp2)
  58. List of other papers and conference presentations / p250 (0128.jp2)
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各種コード

  • NII論文ID(NAID)
    500000153778
  • NII著者ID(NRID)
    • 8000001092792
  • DOI(NDL)
  • NDL書誌ID
    • 000000318092
  • データ提供元
    • NDL-OPAC
    • NDLデジタルコレクション
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