Study of InP/InGaAs heterostructure bipolar transistors grown by metal-organic vapor phase epitaxy 有機金属気相成長InP/InGaAsヘテロ構造バイポーラトランジスタに関する研究

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著者

    • 栗島, 賢二 クリシマ, ケンジ

書誌事項

タイトル

Study of InP/InGaAs heterostructure bipolar transistors grown by metal-organic vapor phase epitaxy

タイトル別名

有機金属気相成長InP/InGaAsヘテロ構造バイポーラトランジスタに関する研究

著者名

栗島, 賢二

著者別名

クリシマ, ケンジ

学位授与大学

東京工業大学

取得学位

博士 (工学)

学位授与番号

乙第3033号

学位授与年月日

1997-03-31

注記・抄録

博士論文

目次

  1. 論文目録 / (0001.jp2)
  2. Table of Contents / p3 (0006.jp2)
  3. 1.Introduction / p6 (0008.jp2)
  4. 1.1 Status and potential of InP-based HBTs / p6 (0008.jp2)
  5. 1.2 Backeround of HBTs / p7 (0008.jp2)
  6. 1.3 Outline of this thesis / p12 (0011.jp2)
  7. References / p12 (0011.jp2)
  8. 2.Basic HBT Characteristics / p22 (0016.jp2)
  9. 2.1 HBT concept / p22 (0016.jp2)
  10. 2.2 Static transport characteristics / p24 (0017.jp2)
  11. 2.3 High-frequency characteristics / p33 (0021.jp2)
  12. 2.4 Performance comparison between InP/InGaAs and AlGaAs/GaAs HBTs / p44 (0027.jp2)
  13. References / p47 (0028.jp2)
  14. 3.MOVPE Growth and HBT Current Gain / p50 (0030.jp2)
  15. 3.1 Introduction / p50 (0030.jp2)
  16. 3.2 MOVPE growth and materials properties / p51 (0030.jp2)
  17. 3.3 Device structure and fabrication / p55 (0032.jp2)
  18. 3.4 Current gain characteristics / p56 (0033.jp2)
  19. 3.5 Evaluation of Zn thermal diffusion / p61 (0035.jp2)
  20. 3.6 Conclusions / p63 (0036.jp2)
  21. References / p64 (0037.jp2)
  22. 4.Anomalous Zn Diffusion in HBTs / p66 (0038.jp2)
  23. 4.1 Introduction / p66 (0038.jp2)
  24. 4.2 Experimental procedure / p67 (0038.jp2)
  25. 4.3 Influence of low-temperature growth on anomalous Zn diffusion / p69 (0039.jp2)
  26. 4.4 Time constants for point-defect generation and migration / p74 (0042.jp2)
  27. 4.5 Effect of long-time growth interruption before base formation / p76 (0043.jp2)
  28. 4.6 Conclusions / p78 (0044.jp2)
  29. References / p79 (0044.jp2)
  30. 5.InxGa₁₋x₋As Graded-Base HBTs / p80 (0045.jp2)
  31. 5.1 Introduction / p80 (0045.jp2)
  32. 5.2 Band structure of strained InxGa₁₋xAs / p82 (0046.jp2)
  33. 5.3 Device structure and fabrication / p86 (0048.jp2)
  34. 5.4 Base transport properties / p92 (0051.jp2)
  35. 5.5 Influence of quasi-drift field in the base on collector transport / p97 (0053.jp2)
  36. 5.6 Conclusions / p101 (0055.jp2)
  37. References / p102 (0056.jp2)
  38. 6.InP Collector DHBTs / p104 (0057.jp2)
  39. 6.1 Introduction / p104 (0057.jp2)
  40. 6.2 Device design and fabrication / p106 (0058.jp2)
  41. 6.3 Collector current turn-on characteristics / p108 (0059.jp2)
  42. 6.4 Collector breakdown characteristics / p110 (0060.jp2)
  43. 6.5 Electron transport properties in InP collector / p117 (0063.jp2)
  44. 6.6 pn-pair doping:another approach to suppressing current blocking / p124 (0067.jp2)
  45. 6.7 Conclusions / p127 (0068.jp2)
  46. References / p127 (0068.jp2)
  47. 7.Influence of External Collector Capacitance on ƒmax / p130 (0070.jp2)
  48. 7.1 Introduction / p130 (0070.jp2)
  49. 7.2 Theoretical analysis / p130 (0070.jp2)
  50. 7.3 Influence of external collector capacitance on ƒmax in a small-scale HBT / p133 (0071.jp2)
  51. 7.4 Effect of emitter size shrinkage on ƒmax / p139 (0074.jp2)
  52. 7.5 Influence of external collector capacitance on MAG / p139 (0074.jp2)
  53. 7.6 Conclusions / p140 (0075.jp2)
  54. References / p140 (0075.jp2)
  55. 8.High-Speed Potential of InP/InGaAs HBTs / p142 (0076.jp2)
  56. 8.1 Base design consideration / p142 (0076.jp2)
  57. 8.2 Cutoff frequencies ƒт and ƒmax / p147 (0078.jp2)
  58. 8.3 Propagation delay of ECL gates / p150 (0080.jp2)
  59. References / p155 (0082.jp2)
  60. 9.Summary and Prospect / p156 (0083.jp2)
  61. Appendixes / p160 (0085.jp2)
  62. A.Thermionic-emission current across the heterojunction / p160 (0085.jp2)
  63. B.RC network for the intrinsic region / p163 (0086.jp2)
  64. C.RC network for the spacer region / p166 (0088.jp2)
  65. D.RC network for the base-electrode region / p166 (0088.jp2)
  66. E.Validity of the circuit transformation / p169 (0089.jp2)
  67. References / p169 (0089.jp2)
  68. Acknowledgments / p170 (0090.jp2)
  69. List of Publications / p171 (0090.jp2)
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各種コード

  • NII論文ID(NAID)
    500000153903
  • NII著者ID(NRID)
    • 8000001092917
  • DOI(NDL)
  • NDL書誌ID
    • 000000318217
  • データ提供元
    • NDL-OPAC
    • NDLデジタルコレクション
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