Recombination and photodegradation in hydrogenated amorphous silicon p-i-n diodes 水素化アモルファス・シリコンpinダイオード中の再結合と光劣化

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著者

    • Han, Daxing ハン, ターミン

書誌事項

タイトル

Recombination and photodegradation in hydrogenated amorphous silicon p-i-n diodes

タイトル別名

水素化アモルファス・シリコンpinダイオード中の再結合と光劣化

著者名

Han, Daxing

著者別名

ハン, ターミン

学位授与大学

岐阜大学

取得学位

博士 (工学)

学位授与番号

乙第1号

学位授与年月日

1996-06-19

注記・抄録

博士論文

目次

  1. 論文目録 / (0001.jp2)
  2. ABSTRACT / (0004.jp2)
  3. TABLE OF CONTENTS / p2 (0006.jp2)
  4. 1 INTRODUCTION / p4 (0008.jp2)
  5. 2 STRUCTURE CHARACTERISTICS OF AMORPHOUS SEMICONDUCTORS / p7 (0011.jp2)
  6. 2.1 Atomic Structure / p7 (0011.jp2)
  7. 2.2 Electronic Structure / p9 (0013.jp2)
  8. 2.3 Defects in Undoped a-Si:H / p15 (0019.jp2)
  9. 2.4 Thermal Equilibrium and Metastability / p16 (0020.jp2)
  10. 3 CARRIER TRANSPORT,TRAPPING,AND RECOMBINATION IN A-SI:H / p21 (0025.jp2)
  11. 3.1 Despersive Transport and Multipe-trapping Model / p21 (0025.jp2)
  12. 3.2 Deep-trapping Processes and Time Dependent Mobility-lifetime Product / p22 (0026.jp2)
  13. 3.3 Recombination of Excess Carriers / p23 (0027.jp2)
  14. 4 SAMPLE CONDITIONS AND EXPERIMENTAL METHODS / p28 (0032.jp2)
  15. 4.1 p-i-n Samples / p28 (0032.jp2)
  16. 4.2 Experimental Layout / p31 (0035.jp2)
  17. 4.3 Forward Bias Current / p32 (0036.jp2)
  18. 4.4 Steady State EL and its Energy Spectrum / p35 (0039.jp2)
  19. 4.5 Transient Electroluminescence / p39 (0043.jp2)
  20. 5 FORWARD BIAS CURRENT IN P-I-N DEVICES / p41 (0045.jp2)
  21. 5.1 Forward Bias Current Decay in 2μm Thick a-SI:H p-i-n Diode / p41 (0045.jp2)
  22. 5.2 Frequency Dependence of Transient Forward Bias Current / p43 (0047.jp2)
  23. 5.3 Applied Voltage Dependence of Transient Forward Bias Current / p46 (0050.jp2)
  24. 6 EL EFFICIENCY IN A-SI:H P-I-N DIODES / p49 (0053.jp2)
  25. 6.1 Test of Thermal Emission / p49 (0053.jp2)
  26. 6.2 The Effective EL efficiency / p51 (0055.jp2)
  27. 6.3 The Power Law Dependence of EL Intensity on Forward Current in p-i-n Devices / p52 (0056.jp2)
  28. 6.4 A Distinct Recombination Regime in a-Si:H Diodes Under Double Injection / p58 (0062.jp2)
  29. 6.5 EL Efficiency as a Function of Solar Cell Initial efficiency / p65 (0069.jp2)
  30. 7 EL SPECTRUM IN A-SI:H P-I-N DEVICES / p69 (0073.jp2)
  31. 7.1 Temperature dependence of EL spectra / p69 (0073.jp2)
  32. 7.2 Applied Voltage Dependence of EL Spectra / p70 (0074.jp2)
  33. 7.3 i-layer Thickness Dependence of EL Spectra / p72 (0076.jp2)
  34. 7.4 Buffer-Layer Dependence of EL Spectra / p75 (0079.jp2)
  35. 8 PHOTODEGRADATION OF P-I-N CELLS STUDIED BY FORWARD BIAS CURRENT AND EL / p80 (0084.jp2)
  36. 8.1 Light-soaking Effects on Forward Bias Current / p80 (0084.jp2)
  37. 8.2 Light-soaking Effects on EL / p84 (0088.jp2)
  38. 9 PHOTODEGRADATION KINETICS OF P-I-N CELLS STUDIED BY EL SPECTROSCOPY / p92 (0096.jp2)
  39. 9.1 EL Photon Energy Spectra in p-i-n Samples Made with or without H₂-dilution / p92 (0096.jp2)
  40. 9.2 Step by Step Light-soaking / p93 (0097.jp2)
  41. 10 CONCLUSIONS / p98 (0102.jp2)
  42. 10.1 Summary / p98 (0102.jp2)
  43. 10.2 Two Favorable Energy Positions of DBs / p99 (0103.jp2)
  44. ACKNOWLEDGMENTS / p101 (0105.jp2)
  45. REFERENCES / p102 (0106.jp2)
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各種コード

  • NII論文ID(NAID)
    500000154903
  • NII著者ID(NRID)
    • 8000000155174
  • DOI(NDL)
  • NDL書誌ID
    • 000000319217
  • データ提供元
    • 機関リポジトリ
    • NDL-OPAC
    • NDLデジタルコレクション
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