Transient capacitance spectroscopy study of deep levels in Ⅱ-Ⅵ compounds 過渡容量分光法によるⅡ-Ⅵ族化合物半導体中の深い準位の研究
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著者
書誌事項
- タイトル
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Transient capacitance spectroscopy study of deep levels in Ⅱ-Ⅵ compounds
- タイトル別名
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過渡容量分光法によるⅡ-Ⅵ族化合物半導体中の深い準位の研究
- 著者名
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王, 守琦
- 著者別名
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ワン, シュキ
- 学位授与大学
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東北大学
- 取得学位
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博士(工学)
- 学位授与番号
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甲第6603号
- 学位授与年月日
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1998-09-09
注記・抄録
博士論文
目次
- Abstract / p1 (0004.jp2)
- CONTENTS / p2 (0005.jp2)
- 1.INTRODUCTION / p1 (0008.jp2)
- 1.1 BLUE/GREEN LIGHT EMITTING DEVICES AND II-VI SEMICONDUCTORS / p1 (0008.jp2)
- 1.2 DEVELOPMENT OF ZNSE-BASED LD / p2 (0009.jp2)
- 1.3 PROBLEMS OF ZNSE-BASE LD / p3 (0010.jp2)
- 1.4 MOTIVATION OF THE STUDY / p8 (0015.jp2)
- 2.PRINCIPLE OF CAPACITANCE TRANSIENT SPECTROSCOPY AND EXPERIMENTAL SET UP / p13 (0020.jp2)
- 2.1 INTRODUCTION / p13 (0020.jp2)
- 2.2 CAPACITANCE OF DEPLETION LAYER AND ITS TRANSIENT / p13 (0020.jp2)
- 2.3 CAPACITANCE SPECTROSCOPY / p18 (0025.jp2)
- 2.4 EXPERIMENTAL SET UP / p33 (0040.jp2)
- 3.STUDY OF DEEP LEVELS IN P-TYPE ZNSE:N USING CAPACITANCE TRANSIENT SPECTROSCOPY / p36 (0043.jp2)
- 3.1 INTRODUCTION / p36 (0043.jp2)
- 3.2 PRINCIPLE OF PHOTO CAPACITANCE TRANSIENT SPECTROSCOPY(PCTS) / p39 (0046.jp2)
- 3.3 EXPERIMENTAL DETAILS / p42 (0049.jp2)
- 3.4 NET ACCEPTOR CONCENTRATION / p43 (0050.jp2)
- 3.5 DETECTION OF ELECTRON TRAP / p49 (0056.jp2)
- 3.6 CHARATERIZATION OF ELECTRON TRAP BY PCTS / p56 (0063.jp2)
- 3.7 HOLE TRAP LEVEL CHARACTERIZED BY DLTS / p73 (0080.jp2)
- 3.8 DISCUSSION / p75 (0082.jp2)
- 3.9 SUMMARY / p77 (0084.jp2)
- 4.STUDY OF ELECTRONIC STATES IN P-TYPE ZNSE/ZNTE SUPERLATTICE USING CAPACITANCE TRANSIENT SPECTROSCOPY / p81 (0088.jp2)
- 4.1 INTRODUCTION / p81 (0088.jp2)
- 4.2 PRINCIPLE OF MEASUREMENTS / p83 (0090.jp2)
- 4.3 EXPERIMENTAL AND RESULTS / p87 (0094.jp2)
- 4.4 THEORETICAL ANALYSIS / p97 (0104.jp2)
- 4.5 DISCUSSION / p106 (0113.jp2)
- 4.6 CONCLUSION / p109 (0116.jp2)
- 5.ELECTROCHEMICAL DEEP LEVEL PROFILING TECHNIQUE / p112 (0119.jp2)
- 5.1 INTRODUCTION / p112 (0119.jp2)
- 5.2 PRINCIPLE OF MEASUREMENT / p114 (0121.jp2)
- 5.3 EXPERIMENTAL EQUIPMENT / p118 (0125.jp2)
- 5.4 ELECTRIC POTENTIAL AND BAND DIAGRAMS / p122 (0129.jp2)
- 5.5 DETERMINATION OF ELECTROCHEMICAL ETCHING CONDITIONS / p129 (0136.jp2)
- 5.6 PROFILING OF DOPING CONCENTRATION / p133 (0140.jp2)
- 5.7 PROFILING OF DEEP LEVELS / p139 (0146.jp2)
- 5.8 DISCUSSION / p146 (0153.jp2)
- 5.9 SUMMARY / p147 (0154.jp2)
- 6.CONCLUSIONS / p149 (0156.jp2)
- ACKNOWLEDGMENT / p152 (0159.jp2)
- LIST OF PUBLICATIONS / p154 (0161.jp2)