Isothermal vapor phase epitaxy and characterization of high quality Hg[1-x](Cd[1-y]Zn[y])[x]Te 高品位Hg[1-x](Cd[1-y]Zn[y])[x]Teの等温気相エピタキシーと特性評価

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Author

    • 具, 本欣 クー, ボンフン

Bibliographic Information

Title

Isothermal vapor phase epitaxy and characterization of high quality Hg[1-x](Cd[1-y]Zn[y])[x]Te

Other Title

高品位Hg[1-x](Cd[1-y]Zn[y])[x]Teの等温気相エピタキシーと特性評価

Author

具, 本欣

Author(Another name)

クー, ボンフン

University

東北大学

Types of degree

博士 (工学)

Grant ID

乙第7619号

Degree year

1998-12-09

Note and Description

博士論文

Table of Contents

  1. Contents / p1 (0003.jp2)
  2. Chapter1 Introduction / p1 (0008.jp2)
  3. 1.1 Necessity of High Quality MCZT Epilayers / p1 (0008.jp2)
  4. 1.2 Substrates for MCZT Epilayers / p4 (0011.jp2)
  5. 1.3 Present State and Problems on the ISOVPE Growth of MCZT Epilayers / p10 (0017.jp2)
  6. 1.4 Objectives and Outline of this Thesis / p14 (0021.jp2)
  7. References for Chapter1 / p19 (0026.jp2)
  8. Chapter2 Experimental Method / p24 (0031.jp2)
  9. 2.1 Isothermal Vapor Phase Epitaxy(ISOVPE) / p24 (0031.jp2)
  10. 2.2 Preparation of Source and Substrate Materials / p27 (0034.jp2)
  11. 2.3 Hot Wall Epitaxy(HWE) / p34 (0041.jp2)
  12. 2.4 Characterization of Grown Epilayers / p36 (0043.jp2)
  13. References for Chapter2 / p47 (0054.jp2)
  14. Chapter3 Growth Kinetics of Hg₁₋χCdχTe Epilayers on Bulk(110)CdTe by Semiclosed Open-Tube Isothermal Vapor Phase Epitaxy / p48 (0055.jp2)
  15. 3.1 Introduction / p48 (0055.jp2)
  16. 3.2 Weight Loss of HgTe Reservoir / p49 (0056.jp2)
  17. 3.3 Effect of Growth Parameters on the Surface Composition(χ)and Thickness / p51 (0058.jp2)
  18. 3.4 Growth Rate Constant / p56 (0063.jp2)
  19. 3.5.Interdiffusion Coefficient / p59 (0066.jp2)
  20. 3.6 Conclusions / p66 (0073.jp2)
  21. References for Chapter3 / p67 (0074.jp2)
  22. Chapter4 Effect of Lattice Match and Zn Addition on the Properties of [化学式] Epilayers / p69 (0076.jp2)
  23. 4.1 Introduction / p69 (0076.jp2)
  24. 4.2 Comparison of MCT and MCZT Composition Profile on Cleaved Cross-Section / p70 (0077.jp2)
  25. 4.3 Effect of Source Composition / p73 (0080.jp2)
  26. 4.4 Uniformity of MCZT Epilayers / p75 (0082.jp2)
  27. 4.5 Comparison of Properties between MCT and MCZT / p78 (0085.jp2)
  28. 4.6 Origin of Excellent Crystallinity of MCZT/CZT Epilayers / p82 (0089.jp2)
  29. 4.7 Conclusions / p86 (0093.jp2)
  30. References for Chapter4 / p87 (0094.jp2)
  31. Chapter5 Hot Wall Epitaxy and Evaluation of High Quality[化学式](y=0 and 0.045) Epilayers on(100)GaAs / p89 (0096.jp2)
  32. 5.1 Introduction / p89 (0096.jp2)
  33. 5.2 Determination of Optimum Growth Conditions / p91 (0098.jp2)
  34. 5.3 Discussion on the Growth Rate and Composition(y) / p112 (0119.jp2)
  35. 5.4 Relation between Quality and Epilayer Thickness / p122 (0129.jp2)
  36. 5.5 Conclusions / p132 (0139.jp2)
  37. References for Chapter5 / p134 (0141.jp2)
  38. Chapter6 Isothermal Vapor Phase Epitaxy of [化学式] on(100)[化学式]/GaAs Substrates / p137 (0144.jp2)
  39. 6.1 Introduction / p137 (0144.jp2)
  40. 6.2 Effect of CdTe Substrate Layer Thickness on ISOVPE Growth of MCT Epilayers / p138 (0145.jp2)
  41. 6.3 Formation Mechanism of Triangular Voids / p142 (0149.jp2)
  42. 6.4 Effect of the Substrate Layer Thickness on Quality of MCT and MCZT Epilayers / p145 (0152.jp2)
  43. 6.5 Comparison of Crystallinity between MCT/CdTe/GaAs and MCZT/CZT/GaAs / p148 (0155.jp2)
  44. 6.6 Conclusions / p150 (0157.jp2)
  45. References for Chapter6 / p152 (0159.jp2)
  46. Chapter7 Conclusions / p154 (0161.jp2)
  47. Acknowledgements / p159 (0166.jp2)
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Codes

  • NII Article ID (NAID)
    500000171215
  • NII Author ID (NRID)
    • 8000000171489
  • DOI(NDL)
  • NDLBibID
    • 000000335529
  • Source
    • NDL ONLINE
    • NDL Digital Collections

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