Characterization of SIMOX (Separation-by-implanted-oxygen) materials and devices SIMOX基板とSIMOXデバイスの特性評価
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Bibliographic Information
- Title
-
Characterization of SIMOX (Separation-by-implanted-oxygen) materials and devices
- Other Title
-
SIMOX基板とSIMOXデバイスの特性評価
- Author
-
吉野, 明
- Author(Another name)
-
ヨシノ, アキラ
- University
-
慶応義塾大学
- Types of degree
-
博士(工学)
- Grant ID
-
乙第3259号
- Degree year
-
1999-03-04
Note and Description
博士論文
Table of Contents
- 論文目録 / (0001.jp2)
- Abstract / p1 (0004.jp2)
- CONTENTS / p6 (0007.jp2)
- 1.Introduction to The SIMOX Technology / p1 (0009.jp2)
- 1.1 Silicon-on-insulator(SOI)technology / p2 (0010.jp2)
- 1.2 Various fabrication methods of SOI substrates / p4 (0011.jp2)
- 1.3 The SIMOX technology / p6 (0012.jp2)
- 1.4 The objective and the organization of this thesis / p10 (0014.jp2)
- References / p11 (0014.jp2)
- 2.Redistribution Process of Oxygen Atoms in SIMOX Substrates / p13 (0015.jp2)
- 2.1 Introduction / p14 (0016.jp2)
- 2.2 Experimental / p15 (0016.jp2)
- 2.3 Results and Discussion / p16 (0017.jp2)
- 2.4 Summary / p38 (0028.jp2)
- References / p39 (0028.jp2)
- 3.Formation Mechanisms of SOI Structures in SIMOX Substrates / p41 (0029.jp2)
- 3.1 Introduction / p42 (0030.jp2)
- 3.2 Experimental / p42 (0030.jp2)
- 3.3 Results and Discussion / p44 (0031.jp2)
- 3.4 Summary / p81 (0049.jp2)
- References / p84 (0051.jp2)
- 4.Dislocation Densities in SIMOX Substrates / p85 (0051.jp2)
- 4.1 Introduction / p86 (0052.jp2)
- 4.2 Experimental / p87 (0052.jp2)
- 4.3 Results and Discussion / p88 (0053.jp2)
- 4.4 Summary / p114 (0066.jp2)
- References / p115 (0066.jp2)
- 5.Fundamental Concepts for SOI Device Physics / p116 (0067.jp2)
- 5.1 Partially-depleted mode and fully-depleted mode SOI transistors / p117 (0067.jp2)
- 5.2 Floating-body effects in PD-mode SOI transistors / p122 (0070.jp2)
- 5.3 Interface coupling effects in FD-mode SOI transistors / p129 (0073.jp2)
- References / p137 (0077.jp2)
- 6.Front-and Back-Interface Trap Densities and Subthreshold Swings of Fully Depleted Mode NMOS/SIMOX Transistors / p138 (0078.jp2)
- 6.1 Introduction / p139 (0078.jp2)
- 6.2 Experimental / p140 (0079.jp2)
- 6.3 Results and Discussion / p141 (0079.jp2)
- 6.4 Summary / p162 (0090.jp2)
- References / p163 (0090.jp2)
- 7.Hot Carrier Effects in Fully Depleted Mode NMOS/SIMOX as Influenced by Back Interface Degradation / p165 (0091.jp2)
- 7.1 Introduction / p166 (0092.jp2)
- 7.2 Experimental / p167 (0092.jp2)
- 7.3 Results and Discussion / p168 (0093.jp2)
- 7.4 Summary / p182 (0100.jp2)
- References / p182 (0100.jp2)
- 8.The Essential Factors for High-Speed,Low-Power CMOS/SIMOX Circuits / p183 (0100.jp2)
- 8.1 Introduction / p184 (0101.jp2)
- 8.2 Experimental / p185 (0101.jp2)
- 8.3 Results and Discussion / p189 (0103.jp2)
- 8.4 Summary / p208 (0113.jp2)
- References / p209 (0113.jp2)
- 9.Performances of CMOS Circuits Fabricated on Low-Dose SIMOX Substrates / p211 (0114.jp2)
- 9.1 Introduction / p212 (0115.jp2)
- 9.2 Experimental / p213 (0115.jp2)
- 9.3 Results and discussion / p217 (0117.jp2)
- 9.4 Summary / p241 (0129.jp2)
- References / p242 (0130.jp2)
- 10.Summary / p243 (0130.jp2)
- 10.1 Summary of this dissertation / p244 (0131.jp2)
- 10.2 Suggested future works / p248 (0133.jp2)
- List of Published Papers / p250 (0134.jp2)
- List of Presentations at International Conferences / p251 (0134.jp2)
- List of Abbreviations and Acronyms / p252 (0135.jp2)