Study on material characteristics of heteroepitaxial GaN and GaAs for opto-electronic devices 光・電子デバイス用ヘテロエピタキシャルGaNおよびGaAsの物性に関する研究

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著者

    • 林, 靖彦 ハヤシ, ヤスヒコ

書誌事項

タイトル

Study on material characteristics of heteroepitaxial GaN and GaAs for opto-electronic devices

タイトル別名

光・電子デバイス用ヘテロエピタキシャルGaNおよびGaAsの物性に関する研究

著者名

林, 靖彦

著者別名

ハヤシ, ヤスヒコ

学位授与大学

名古屋工業大学

取得学位

博士(工学)

学位授与番号

甲第269号

学位授与年月日

1999-03-24

注記・抄録

博士論文

目次

  1. Contents / p1 (0004.jp2)
  2. 1 Introduction / p1 (0005.jp2)
  3. 1.1 Background / p1 (0005.jp2)
  4. 1.2 Purpose of Dissertation / p4 (0007.jp2)
  5. 1.3 Organization of Dissertation / p4 (0007.jp2)
  6. 2 Theoretical Studies on Transport Properties in Cubic Phase GaN / p10 (0010.jp2)
  7. 2.1 Introduction / p10 (0010.jp2)
  8. 2.2 Fundamental Transport Theory / p10 (0010.jp2)
  9. 2.3 Electron Transport Characteristics Calculated by Monte Carlo Simulation / p12 (0011.jp2)
  10. 2.4 Hole Transport Characteristics Calculated by Relaxation Time Approximation / p17 (0013.jp2)
  11. 2.5 Conclusions / p23 (0016.jp2)
  12. Appendix / p40 (0025.jp2)
  13. A Kane Model and Nonparabolicity / p40 (0025.jp2)
  14. B Determination of Γ,[数式],a₁₁ and a₁₂ / p41 (0025.jp2)
  15. C Other Scattering Mechanisms in Hole Transport Calculation / p42 (0026.jp2)
  16. 3 Raman Scattering Characterization of Hexagonal GaN Layer on Sapphire Substrate / p45 (0027.jp2)
  17. 3.1 Introduction / p45 (0027.jp2)
  18. 3.2 Experiments / p46 (0028.jp2)
  19. 3.3 First-Order Raman Effect in Hexagonal Phase GaN / p46 (0028.jp2)
  20. 3.4 Mechanisms and Theory of Raman Scattering from Phonon-Plasmon Modes / p47 (0028.jp2)
  21. 3.5 Experimental Results and Discussion / p48 (0029.jp2)
  22. 3.6 Strain Relaxation in Post-Growth Patterned GaN Film / p50 (0030.jp2)
  23. 3.7 Conclusions / p52 (0031.jp2)
  24. 4 Electron Spin Resonance Study of As-grown and High Energy Electron Irradiation-Induced Hexagonal GaN Layer on Sapphire Substrate / p71 (0040.jp2)
  25. 4.1 Introduction / p71 (0040.jp2)
  26. 4.2 Difficulties in ESR Measurements / p72 (0041.jp2)
  27. 4.3 Experimental / p72 (0041.jp2)
  28. 4.4 ESR Properties in As-grown GaN / p72 (0041.jp2)
  29. 4.5 Optical and ESR Properties in Electron Irrdiation-Induced n-GaN / p75 (0042.jp2)
  30. 4.6 Conclusions / p78 (0044.jp2)
  31. 5 Thermal Stress Reduction of GaAs Layer over Thin Si Layer on Porous1 Si Substrate / p93 (0051.jp2)
  32. 5.1 Introduction / p93 (0051.jp2)
  33. 5.2 Similar Study / p94 (0052.jp2)
  34. 5.3 Preparation of Porous Si Wafer / p94 (0052.jp2)
  35. 5.4 Epitaxial Growth of GaAs / p94 (0052.jp2)
  36. 5.5 Characterization Details / p95 (0052.jp2)
  37. 5.6 Experimental Results and Analysis / p95 (0052.jp2)
  38. 5.7 Conclusions / p98 (0054.jp2)
  39. 6 Summary / p110 (0060.jp2)
  40. Acknowledgments / p112 (0061.jp2)
  41. List of Publications / p113 (0061.jp2)
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各種コード

  • NII論文ID(NAID)
    500000173167
  • NII著者ID(NRID)
    • 8000000173443
  • DOI(NDL)
  • NDL書誌ID
    • 000000337481
  • データ提供元
    • NDL-OPAC
    • NDLデジタルコレクション
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