グラヴィメトリックおよび光学的その場測定法を用いたGaAs原子層エピタキシーの成長過程に関する研究
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Bibliographic Information
- Title
-
グラヴィメトリックおよび光学的その場測定法を用いたGaAs原子層エピタキシーの成長過程に関する研究
- Author
-
瀧, 哲也
- Author(Another name)
-
タキ, テツヤ
- University
-
東京農工大学
- Types of degree
-
博士(工学)
- Grant ID
-
甲第203号
- Degree year
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1999-03-25
Note and Description
博士論文
Table of Contents
- Contents / p1 (0003.jp2)
- Chapter1. Introduction / p1 (0005.jp2)
- 1.1 Introduction / p2 (0006.jp2)
- 1.2 References / p6 (0010.jp2)
- Chapter2. Experimental methods / p7 (0011.jp2)
- 2.1 Introduction / p8 (0012.jp2)
- 2.2 Atomic layer epitaxy(ALE) / p8 (0012.jp2)
- 2.3 In situ gravimetric monitoring / p10 (0014.jp2)
- 2.4 Surface photoabsorption(SPA) / p11 (0015.jp2)
- 2.5 References / p12 (0016.jp2)
- Chapter3. Atomic layer epitaxy of GaAs using GaBr and GaI sources / p13 (0017.jp2)
- 3.1 Introduction / p14 (0018.jp2)
- 3.2 Experimental procedure / p14 (0018.jp2)
- 3.3 Results and discussion / p15 (0019.jp2)
- 3.4 Conclusions / p22 (0026.jp2)
- 3.5 References / p23 (0027.jp2)
- Chapter4. Hydrogen chemisorption on the GaAs(OO1)Ga surface / p24 (0028.jp2)
- 4.1 Introduction / p25 (0029.jp2)
- 4.2 Experimental procedure / p25 (0029.jp2)
- 4.3 Results and discussion / p26 (0030.jp2)
- 4.4 Conclusions / p34 (0038.jp2)
- 4.5 References / p35 (0039.jp2)
- Chapter5. Hydrogen chemisorption on the GaAs(111)B Ga surface / p36 (0040.jp2)
- 5.1 Introduction / p37 (0041.jp2)
- 5.2 Experimental procedure / p37 (0041.jp2)
- 5.3 Results and discussion / p38 (0042.jp2)
- 5.4 Conclusions / p51 (0055.jp2)
- 5.5 References / p51 (0055.jp2)
- Chapter6. Arsenic desorption from the GaAs(111)B As surface / p52 (0056.jp2)
- 6.1 Introduction / p53 (0057.jp2)
- 6.2 Experimental procedure / p54 (0058.jp2)
- 6.3 Results and discussion / p54 (0058.jp2)
- 6.4 Conclusions / p65 (0069.jp2)
- 6.5 References / p66 (0070.jp2)
- Chapter7. Conclusions / p67 (0071.jp2)
- Acknowledgments / p70 (0074.jp2)
- Papers list / p72 (0076.jp2)
