Improvement of the energy resolution of localized-state measurement in disordered semiconductors and its application to studies of the localized states in organic semiconductors 不規則系半導体の局在準位測定法の高分解能化とその有機半導体局在準位評価への応用

この論文をさがす

著者

    • 永瀬, 隆 ナガセ, タカシ

書誌事項

タイトル

Improvement of the energy resolution of localized-state measurement in disordered semiconductors and its application to studies of the localized states in organic semiconductors

タイトル別名

不規則系半導体の局在準位測定法の高分解能化とその有機半導体局在準位評価への応用

著者名

永瀬, 隆

著者別名

ナガセ, タカシ

学位授与大学

大阪府立大学

取得学位

博士 (工学)

学位授与番号

甲第625号

学位授与年月日

2000-03-31

注記・抄録

博士論文

目次

  1. Contents / p1 (0003.jp2)
  2. List of symbols / p5 (0005.jp2)
  3. List of abbreviations / p7 (0006.jp2)
  4. 1 Introduction / p1 (0007.jp2)
  5. References / p6 (0010.jp2)
  6. 2 Review of a method for measuring localized-state distributions from transient photoconductivity using Laplace transform and determination of free carrier recombination lifetime / p8 (0011.jp2)
  7. 2.1 Introduction / p8 (0011.jp2)
  8. 2.2 Review of the Laplace transform method / p10 (0012.jp2)
  9. 2.3 Determination of free carrier recombination lifetime using the Laplace transform method / p13 (0013.jp2)
  10. 2.4 Experiment / p13 (0013.jp2)
  11. 2.5 Results and discussion / p16 (0015.jp2)
  12. 2.6 Conclusions / p19 (0016.jp2)
  13. References / p19 (0016.jp2)
  14. 3 Improvement of energy resolution of the Laplace transform method -numerical approach- / p21 (0017.jp2)
  15. 3.1 Introduction / p21 (0017.jp2)
  16. 3.2 Theory / p23 (0018.jp2)
  17. 3.3 Numerical calculation procedure / p27 (0020.jp2)
  18. 3.4 Numerical results and discussion / p28 (0021.jp2)
  19. 3.5 Application to experimentally obtained transient photoconductivity and time-of-flight data / p35 (0024.jp2)
  20. 3.6 Conclusions / p40 (0027.jp2)
  21. References / p40 (0027.jp2)
  22. 4 Improvement of energy resolution of the Laplace transform method-analytical approach- / p43 (0028.jp2)
  23. 4.1 Introduction / p43 (0028.jp2)
  24. 4.2 Theory / p44 (0029.jp2)
  25. 4.3 Numerical simulation / p47 (0030.jp2)
  26. 4.4 Results and discussion / p49 (0031.jp2)
  27. 4.5 Conclusions / p58 (0036.jp2)
  28. References / p59 (0036.jp2)
  29. 5 Localized-state distributions in molecularly doped polymers / p61 (0037.jp2)
  30. 5.1 Introduction / p61 (0037.jp2)
  31. 5.2 Overview of the Gaussian disorder model / p63 (0038.jp2)
  32. 5.3 Experiment / p63 (0038.jp2)
  33. 5.4 Results and discussion / p65 (0039.jp2)
  34. 5.5 Conclusions / p75 (0044.jp2)
  35. References / p76 (0045.jp2)
  36. 6 Origin of localized states in metallophthalocyanine thin films / p78 (0046.jp2)
  37. 6.1 Introduction / p78 (0046.jp2)
  38. 6.2 Localized-state distributions due to electrostatic potential fluctuations / p79 (0046.jp2)
  39. 6.3 Experiment / p82 (0048.jp2)
  40. 6.4 Results and discussion / p83 (0048.jp2)
  41. 6.5 Conclusions / p90 (0052.jp2)
  42. References / p91 (0052.jp2)
  43. 7 Conclusions / p94 (0054.jp2)
  44. Appendix / p98 (0056.jp2)
  45. A.Influence of sampling times on calculated localized-state distributions / p98 (0056.jp2)
  46. B.Application of transient photoconductivity analysis to time-of-flight photocurrents / p101 (0057.jp2)
  47. References / p103 (0058.jp2)
  48. Acknowledgments / p104 (0059.jp2)
0アクセス

各種コード

  • NII論文ID(NAID)
    500000186748
  • NII著者ID(NRID)
    • 8000000187031
  • DOI(NDL)
  • NDL書誌ID
    • 000000351062
  • データ提供元
    • NDL ONLINE
    • NDLデジタルコレクション
ページトップへ