Improvement of the energy resolution of localized-state measurement in disordered semiconductors and its application to studies of the localized states in organic semiconductors 不規則系半導体の局在準位測定法の高分解能化とその有機半導体局在準位評価への応用

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Author

    • 永瀬, 隆 ナガセ, タカシ

Bibliographic Information

Title

Improvement of the energy resolution of localized-state measurement in disordered semiconductors and its application to studies of the localized states in organic semiconductors

Other Title

不規則系半導体の局在準位測定法の高分解能化とその有機半導体局在準位評価への応用

Author

永瀬, 隆

Author(Another name)

ナガセ, タカシ

University

大阪府立大学

Types of degree

博士 (工学)

Grant ID

甲第625号

Degree year

2000-03-31

Note and Description

博士論文

Table of Contents

  1. Contents / p1 (0003.jp2)
  2. List of symbols / p5 (0005.jp2)
  3. List of abbreviations / p7 (0006.jp2)
  4. 1 Introduction / p1 (0007.jp2)
  5. References / p6 (0010.jp2)
  6. 2 Review of a method for measuring localized-state distributions from transient photoconductivity using Laplace transform and determination of free carrier recombination lifetime / p8 (0011.jp2)
  7. 2.1 Introduction / p8 (0011.jp2)
  8. 2.2 Review of the Laplace transform method / p10 (0012.jp2)
  9. 2.3 Determination of free carrier recombination lifetime using the Laplace transform method / p13 (0013.jp2)
  10. 2.4 Experiment / p13 (0013.jp2)
  11. 2.5 Results and discussion / p16 (0015.jp2)
  12. 2.6 Conclusions / p19 (0016.jp2)
  13. References / p19 (0016.jp2)
  14. 3 Improvement of energy resolution of the Laplace transform method -numerical approach- / p21 (0017.jp2)
  15. 3.1 Introduction / p21 (0017.jp2)
  16. 3.2 Theory / p23 (0018.jp2)
  17. 3.3 Numerical calculation procedure / p27 (0020.jp2)
  18. 3.4 Numerical results and discussion / p28 (0021.jp2)
  19. 3.5 Application to experimentally obtained transient photoconductivity and time-of-flight data / p35 (0024.jp2)
  20. 3.6 Conclusions / p40 (0027.jp2)
  21. References / p40 (0027.jp2)
  22. 4 Improvement of energy resolution of the Laplace transform method-analytical approach- / p43 (0028.jp2)
  23. 4.1 Introduction / p43 (0028.jp2)
  24. 4.2 Theory / p44 (0029.jp2)
  25. 4.3 Numerical simulation / p47 (0030.jp2)
  26. 4.4 Results and discussion / p49 (0031.jp2)
  27. 4.5 Conclusions / p58 (0036.jp2)
  28. References / p59 (0036.jp2)
  29. 5 Localized-state distributions in molecularly doped polymers / p61 (0037.jp2)
  30. 5.1 Introduction / p61 (0037.jp2)
  31. 5.2 Overview of the Gaussian disorder model / p63 (0038.jp2)
  32. 5.3 Experiment / p63 (0038.jp2)
  33. 5.4 Results and discussion / p65 (0039.jp2)
  34. 5.5 Conclusions / p75 (0044.jp2)
  35. References / p76 (0045.jp2)
  36. 6 Origin of localized states in metallophthalocyanine thin films / p78 (0046.jp2)
  37. 6.1 Introduction / p78 (0046.jp2)
  38. 6.2 Localized-state distributions due to electrostatic potential fluctuations / p79 (0046.jp2)
  39. 6.3 Experiment / p82 (0048.jp2)
  40. 6.4 Results and discussion / p83 (0048.jp2)
  41. 6.5 Conclusions / p90 (0052.jp2)
  42. References / p91 (0052.jp2)
  43. 7 Conclusions / p94 (0054.jp2)
  44. Appendix / p98 (0056.jp2)
  45. A.Influence of sampling times on calculated localized-state distributions / p98 (0056.jp2)
  46. B.Application of transient photoconductivity analysis to time-of-flight photocurrents / p101 (0057.jp2)
  47. References / p103 (0058.jp2)
  48. Acknowledgments / p104 (0059.jp2)
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Codes

  • NII Article ID (NAID)
    500000186748
  • NII Author ID (NRID)
    • 8000000187031
  • DOI(NDL)
  • NDLBibID
    • 000000351062
  • Source
    • NDL ONLINE
    • NDL Digital Collections

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