Studies for below 0.25μm lithography substrate effect of chemically amplified resist and top surface imaging process 0.25μm以細のリソグラフィに関する研究 化学増幅型レジストの基板依存性及び表層イメージングプロセス
Access this Article
Search this Article
Author
Bibliographic Information
- Title
-
Studies for below 0.25μm lithography substrate effect of chemically amplified resist and top surface imaging process
- Other Title
-
0.25μm以細のリソグラフィに関する研究 化学増幅型レジストの基板依存性及び表層イメージングプロセス
- Author
-
森, 重恭
- Author(Another name)
-
モリ, シゲヤス
- University
-
千葉大学
- Types of degree
-
博士 (工学)
- Grant ID
-
乙第2110号
- Degree year
-
2000-03-14
Note and Description
博士論文
Table of Contents
- Contents / (0004.jp2)
- General Introduction / p1 (0010.jp2)
- 1.Introduction / p1 (0010.jp2)
- 2.Substrate Effect of Chemically Amplified Resist / p2 (0011.jp2)
- 3.Top Surface Imaging Process / p3 (0012.jp2)
- 4.The Aim of This Thesis / p5 (0014.jp2)
- References / p7 (0016.jp2)
- Substrate Effect of Chemically Amplified Resist / p15 (0024.jp2)
- Chapter 1 Substrate-Effect of Chemically Amplified Resist / p16 (0025.jp2)
- 1.Introduction / p17 (0026.jp2)
- 2.Experimental / p17 (0026.jp2)
- 3.Results and Discussion / p18 (0027.jp2)
- 4.Conclusion / p24 (0033.jp2)
- 5.Acknowledgments / p24 (0033.jp2)
- References / p26 (0035.jp2)
- Chapter 2 Analysis of Substrate Effect in Chemically Amplified Resist on Silicate-Glass / p39 (0048.jp2)
- 1.Introduction / p40 (0049.jp2)
- 2.Experimental / p40 (0049.jp2)
- 3.Results and Discussion / p41 (0050.jp2)
- 4.Conclusion / p44 (0053.jp2)
- 5.Acknowledgments / p44 (0053.jp2)
- References / p45 (0054.jp2)
- Silylation Characteristics of Top Surface Imaging Process / p53 (0062.jp2)
- Chapter 3 Diffusion Kinetic of Vapor-phase Silylation Process for ArF Lithography / p54 (0063.jp2)
- 1.Introduction / p55 (0064.jp2)
- 2.Experimental / p56 (0065.jp2)
- 3.Results and Discussion / p56 (0065.jp2)
- 4.Conclusion / p59 (0068.jp2)
- 5.Acknowledgments / p60 (0069.jp2)
- References / p61 (0070.jp2)
- Chapter 4 Silylation for Carboxylic Acids / p69 (0078.jp2)
- 1.Introduction / p70 (0079.jp2)
- 2.Experimental / p70 (0079.jp2)
- 3.Results and Discussion / p71 (0080.jp2)
- 4.Conclusion / p75 (0084.jp2)
- 5.Acknowledgments / p75 (0084.jp2)
- References / p77 (0086.jp2)
- Chapter 5 Theoretical and Experimental Study on the Silylation of Alcohol Units in ArF Lithography Resists / p89 (0098.jp2)
- 1.Introduction / p90 (0099.jp2)
- 2.Experimental and Computational Details / p91 (0100.jp2)
- 3.Results and Discussion / p92 (0101.jp2)
- 4.Conclusion / p97 (0106.jp2)
- 5.Acknowledgments / p97 (0106.jp2)
- References / p98 (0107.jp2)
- Further Refined Methods of Top Surface Imaging Process / p107 (0116.jp2)
- Chapter 6 Study of high photo-speed top surface imaging process using chemically amplified resist / p108 (0117.jp2)
- 1.Introduction / p109 (0118.jp2)
- 2.Experimental / p109 (0118.jp2)
- 3.Results and Discussion / p110 (0119.jp2)
- 4.Conclusion / p112 (0121.jp2)
- 5.Acknowledgments / p113 (0122.jp2)
- References / p114 (0123.jp2)
- Chapter 7 Reduction of line edge roughness in the TSI process / p122 (0131.jp2)
- 1.Introduction / p123 (0132.jp2)
- 2.Experiment / p123 (0132.jp2)
- 3.Calculations method / p124 (0133.jp2)
- 4.Results and Discussion / p124 (0133.jp2)
- 5.Conclusion / p127 (0136.jp2)
- 6.Acknowledgments / p128 (0137.jp2)
- References / p129 (0138.jp2)
- Chapter 8 Pattern collapse in the TSI process after dry-development / p140 (0149.jp2)
- 1.Introduction / p141 (0150.jp2)
- 2.Experiment / p141 (0150.jp2)
- 3.Results and Discussion / p142 (0151.jp2)
- 4.Conclusion / p144 (0153.jp2)
- 5.Acknowledgments / p145 (0154.jp2)
- References / p146 (0155.jp2)
- Chapter 9 Sub-O.l-μm-Pattern Fabrication Using a 193-nm Top Surface Imaging(TSI) Process / p155 (0164.jp2)
- 1.Introduction / p156 (0165.jp2)
- 2.Experiment / p157 (0166.jp2)
- 3.Results and Discussion / p157 (0166.jp2)
- 4.Conclusion / p159 (0168.jp2)
- 5.Acknowledgments / p160 (0169.jp2)
- References / p161 (0170.jp2)
- Summary / p172 (0181.jp2)
- Acknowledgements / p175 (0184.jp2)
- List of Publications / p177 (0186.jp2)