Studies for below 0.25μm lithography substrate effect of chemically amplified resist and top surface imaging process 0.25μm以細のリソグラフィに関する研究 化学増幅型レジストの基板依存性及び表層イメージングプロセス

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Author

    • 森, 重恭 モリ, シゲヤス

Bibliographic Information

Title

Studies for below 0.25μm lithography substrate effect of chemically amplified resist and top surface imaging process

Other Title

0.25μm以細のリソグラフィに関する研究 化学増幅型レジストの基板依存性及び表層イメージングプロセス

Author

森, 重恭

Author(Another name)

モリ, シゲヤス

University

千葉大学

Types of degree

博士 (工学)

Grant ID

乙第2110号

Degree year

2000-03-14

Note and Description

博士論文

Table of Contents

  1. Contents / (0004.jp2)
  2. General Introduction / p1 (0010.jp2)
  3. 1.Introduction / p1 (0010.jp2)
  4. 2.Substrate Effect of Chemically Amplified Resist / p2 (0011.jp2)
  5. 3.Top Surface Imaging Process / p3 (0012.jp2)
  6. 4.The Aim of This Thesis / p5 (0014.jp2)
  7. References / p7 (0016.jp2)
  8. Substrate Effect of Chemically Amplified Resist / p15 (0024.jp2)
  9. Chapter 1 Substrate-Effect of Chemically Amplified Resist / p16 (0025.jp2)
  10. 1.Introduction / p17 (0026.jp2)
  11. 2.Experimental / p17 (0026.jp2)
  12. 3.Results and Discussion / p18 (0027.jp2)
  13. 4.Conclusion / p24 (0033.jp2)
  14. 5.Acknowledgments / p24 (0033.jp2)
  15. References / p26 (0035.jp2)
  16. Chapter 2 Analysis of Substrate Effect in Chemically Amplified Resist on Silicate-Glass / p39 (0048.jp2)
  17. 1.Introduction / p40 (0049.jp2)
  18. 2.Experimental / p40 (0049.jp2)
  19. 3.Results and Discussion / p41 (0050.jp2)
  20. 4.Conclusion / p44 (0053.jp2)
  21. 5.Acknowledgments / p44 (0053.jp2)
  22. References / p45 (0054.jp2)
  23. Silylation Characteristics of Top Surface Imaging Process / p53 (0062.jp2)
  24. Chapter 3 Diffusion Kinetic of Vapor-phase Silylation Process for ArF Lithography / p54 (0063.jp2)
  25. 1.Introduction / p55 (0064.jp2)
  26. 2.Experimental / p56 (0065.jp2)
  27. 3.Results and Discussion / p56 (0065.jp2)
  28. 4.Conclusion / p59 (0068.jp2)
  29. 5.Acknowledgments / p60 (0069.jp2)
  30. References / p61 (0070.jp2)
  31. Chapter 4 Silylation for Carboxylic Acids / p69 (0078.jp2)
  32. 1.Introduction / p70 (0079.jp2)
  33. 2.Experimental / p70 (0079.jp2)
  34. 3.Results and Discussion / p71 (0080.jp2)
  35. 4.Conclusion / p75 (0084.jp2)
  36. 5.Acknowledgments / p75 (0084.jp2)
  37. References / p77 (0086.jp2)
  38. Chapter 5 Theoretical and Experimental Study on the Silylation of Alcohol Units in ArF Lithography Resists / p89 (0098.jp2)
  39. 1.Introduction / p90 (0099.jp2)
  40. 2.Experimental and Computational Details / p91 (0100.jp2)
  41. 3.Results and Discussion / p92 (0101.jp2)
  42. 4.Conclusion / p97 (0106.jp2)
  43. 5.Acknowledgments / p97 (0106.jp2)
  44. References / p98 (0107.jp2)
  45. Further Refined Methods of Top Surface Imaging Process / p107 (0116.jp2)
  46. Chapter 6 Study of high photo-speed top surface imaging process using chemically amplified resist / p108 (0117.jp2)
  47. 1.Introduction / p109 (0118.jp2)
  48. 2.Experimental / p109 (0118.jp2)
  49. 3.Results and Discussion / p110 (0119.jp2)
  50. 4.Conclusion / p112 (0121.jp2)
  51. 5.Acknowledgments / p113 (0122.jp2)
  52. References / p114 (0123.jp2)
  53. Chapter 7 Reduction of line edge roughness in the TSI process / p122 (0131.jp2)
  54. 1.Introduction / p123 (0132.jp2)
  55. 2.Experiment / p123 (0132.jp2)
  56. 3.Calculations method / p124 (0133.jp2)
  57. 4.Results and Discussion / p124 (0133.jp2)
  58. 5.Conclusion / p127 (0136.jp2)
  59. 6.Acknowledgments / p128 (0137.jp2)
  60. References / p129 (0138.jp2)
  61. Chapter 8 Pattern collapse in the TSI process after dry-development / p140 (0149.jp2)
  62. 1.Introduction / p141 (0150.jp2)
  63. 2.Experiment / p141 (0150.jp2)
  64. 3.Results and Discussion / p142 (0151.jp2)
  65. 4.Conclusion / p144 (0153.jp2)
  66. 5.Acknowledgments / p145 (0154.jp2)
  67. References / p146 (0155.jp2)
  68. Chapter 9 Sub-O.l-μm-Pattern Fabrication Using a 193-nm Top Surface Imaging(TSI) Process / p155 (0164.jp2)
  69. 1.Introduction / p156 (0165.jp2)
  70. 2.Experiment / p157 (0166.jp2)
  71. 3.Results and Discussion / p157 (0166.jp2)
  72. 4.Conclusion / p159 (0168.jp2)
  73. 5.Acknowledgments / p160 (0169.jp2)
  74. References / p161 (0170.jp2)
  75. Summary / p172 (0181.jp2)
  76. Acknowledgements / p175 (0184.jp2)
  77. List of Publications / p177 (0186.jp2)
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Codes

  • NII Article ID (NAID)
    500000187168
  • NII Author ID (NRID)
    • 8000000187451
  • DOI(NDL)
  • NDLBibID
    • 000000351482
  • Source
    • NDL ONLINE
    • NDL Digital Collections

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