Emission mechanism in quantum wel structures composed of GaN-based semiconductors GaN系半導体量子井戸構造の発光機構に関する研究

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著者

    • 成川, 幸男 ナルカワ, ユキオ

書誌事項

タイトル

Emission mechanism in quantum wel structures composed of GaN-based semiconductors

タイトル別名

GaN系半導体量子井戸構造の発光機構に関する研究

著者名

成川, 幸男

著者別名

ナルカワ, ユキオ

学位授与大学

京都大学

取得学位

博士 (工学)

学位授与番号

甲第8378号

学位授与年月日

2000-03-23

注記・抄録

博士論文

目次

  1. 論文目録 / (0001.jp2)
  2. Contents / p1 (0006.jp2)
  3. Acknowledgements / (0005.jp2)
  4. Contents / p1 (0006.jp2)
  5. 1 Introduction / p1 (0008.jp2)
  6. 1.1 Motivation and Objective / p1 (0008.jp2)
  7. 1.2 Outlines of This Thesis / p6 (0011.jp2)
  8. 2 Optical Property of GaN / p11 (0013.jp2)
  9. 2.1 Introduction / p11 (0013.jp2)
  10. 2.2 Experimental Procedure / p13 (0014.jp2)
  11. 2.3 Dynamical behavior of Excitons in h-GaN Single Epitaxial Layer / p17 (0016.jp2)
  12. 2.4 Spatial and Time-resolved PL Spectroscopy in h-GaN Layers / p24 (0020.jp2)
  13. 2.5 Summary / p29 (0022.jp2)
  14. 3 Structural Analysis of InxGa₁₋xN Quantum Wells / p33 (0024.jp2)
  15. 3.1 Introduction / p33 (0024.jp2)
  16. 3.2 Experimental Procedure / p34 (0025.jp2)
  17. 3.3 Cross Sectional TEM Image of Multiple Quantum Well / p36 (0026.jp2)
  18. 3.4 Spatial Distribution of In Composition / p38 (0027.jp2)
  19. 3.5 Plan-view TEM and AFM Image in InxGa₁₋xN Single Quantum Wells / p39 (0027.jp2)
  20. 3.6 Summary / p41 (0028.jp2)
  21. 4 Dimensionality of Exciton in InxGa₁₋xN Quantum Well Based Laser Diodes / p43 (0029.jp2)
  22. 4.1 Introduction / p43 (0029.jp2)
  23. 4.2 Experimental Procedure / p44 (0030.jp2)
  24. 4.3 Optical Property of [化学式]/In₀.₀₅Ga₀.₉₅N multiple Quantum Well Based LD / p47 (0031.jp2)
  25. 4.5 Optical Property of [化学式]/In₀.₀₂Ga₀.₉₈N multiple Quantum Well Based LD / p63 (0039.jp2)
  26. 4.5 0D and 2D Feature of Excitons / p66 (0041.jp2)
  27. 4.6 Summary / p75 (0045.jp2)
  28. 5 Optical Property of InxGa₁₋xN Single Quantum Well Light Emitting Diodes / p79 (0047.jp2)
  29. 5.1 Introduction / p79 (0047.jp2)
  30. 5.2 Experimental Procedure / p80 (0048.jp2)
  31. 5.3 Optical Property of UV-LED / p85 (0050.jp2)
  32. 5.4 Optical Property of Purple,Blue and Green LED / p89 (0052.jp2)
  33. 5.5 0D Feature of Exciton in Ultra-Bright Blue LED / p93 (0054.jp2)
  34. 5.6 Summary / p98 (0057.jp2)
  35. 6 Formation Mechanism of Optical gain in Violet InxGa₁₋xN Multiple Quantum Well Laser Diodes / p101 (0058.jp2)
  36. 6.1 Introduction / p101 (0058.jp2)
  37. 6.2 Experimental Procedure / p102 (0059.jp2)
  38. 6.3 Photo-pumping at 20K / p111 (0063.jp2)
  39. 6.4 Photo-pumping at RT / p114 (0065.jp2)
  40. 6.5 Dynamical Behavior of Absorption Spectra / p117 (0066.jp2)
  41. 6.6 Summary / p123 (0069.jp2)
  42. 7 Conclusion / p125 (0070.jp2)
  43. Addendum / p129 (0072.jp2)
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各種コード

  • NII論文ID(NAID)
    500000188209
  • NII著者ID(NRID)
    • 8000000188492
  • DOI(NDL)
  • NDL書誌ID
    • 000000352523
  • データ提供元
    • NDL ONLINE
    • NDLデジタルコレクション
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