A study on Si surface roughness for 3-dimensional MOSFETs with HfON gate insulator

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Author

    • HAN, DAEHEE
    • Han, DaeHee

Bibliographic Information

Title

A study on Si surface roughness for 3-dimensional MOSFETs with HfON gate insulator

Author

HAN, DAEHEE

Author

Han, DaeHee

University

東京工業大学

Types of degree

博士(工学)

Grant ID

甲第9535号

Degree year

2014-03-26

Note and Description

identifier:oai:t2r2.star.titech.ac.jp:50276535

identifier:oai:t2r2.star.titech.ac.jp:71136095

Table of Contents

  1. 2021-05-17 再収集 (2コマ目)
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Codes

  • NII Article ID (NAID)
    500000932272
  • NII Author ID (NRID)
    • 8000001585032
    • 8000001585033
  • Text Lang
    • eng
  • Source
    • Institutional Repository
    • NDL Digital Collections

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