Temperature dependence of the sticking probability and molecular size of the film growth species in an atmospheric chemical vapor deposition process to form AlN from AlCl3 and NH3

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  • H. J. Kim
    Department of Chemical Engineering, Faculty of Engineering, The University of Tokyo Bunkyo-ku, Tokyo 113, Japan
  • Y. Egashira
    Department of Chemical Engineering, Faculty of Engineering, The University of Tokyo Bunkyo-ku, Tokyo 113, Japan
  • H. Komiyama
    Department of Chemical Engineering, Faculty of Engineering, The University of Tokyo Bunkyo-ku, Tokyo 113, Japan

抄録

<jats:p>The sticking probability and molecular size of the growth species were determined as a function of deposition temperature ranging from 700 to 950 °C, in the AlN films prepared from AlCl3 and NH3. A novel method was developed, that includes the measurement of the film thickness profile on micron-sized trenches and the molecular diffusivity of the growth species. The molecular size was about 1 nm at 700–850 °C and decreased gradually with increasing temperature. The sticking probability increased from 0.02 to 0.5 in the temperature range 700–950 °C and, surprisingly, obeyed the Arrhenius law in spite of this large probability of sticking. The activation energy amounted to 136 kJ/mol.</jats:p>

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