GaN, AlN, and InN: A review

• S. Strite

  Materials Research Laboratory and Coordinated Science Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801

• H. Morkoç

  Materials Research Laboratory and Coordinated Science Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801

抄録

The status of research on both wurtzite and zinc-blende GaN, AlN, and InN and their alloys is reviewed including exciting recent results. Attention is paid to the crystal growth techniques, structural, optical, and electrical properties of GaN, AlN, InN, and their alloys. The various theoretical results for each material are summarized. We also describe the performance of several device structures which have been demonstrated in these materials. Near-term goals and critical areas in need of further research in the III–V nitride material system are identified.

収録刊行物

• Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

  Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena 10 (4), 1237-1266, 1992-07-01

  American Vacuum Society

キーワード

• Electrical and Electronic Engineering
• Condensed Matter Physics

詳細情報

• CRID: 1361699994678967552
• NII論文ID: 80006782426
• DOI: 10.1116/1.585897
• ISSN: 15208567
• ISSN: 10711023
• Web Site: https://pubs.aip.org/avs/jvb/article-pdf/10/4/1237/11845940/1237_1_online.pdf
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