Three-dimensional "Atomistic" simulation of discrete random dopant distribution effect in sub-0.1μm MOSFET's

• WONG H.-S.

収録刊行物

• IEDM Technical Digest

  IEDM Technical Digest 705-708, 1993

詳細情報

• CRID: 1571135651666961792
• NII論文ID: 80007506109
• NII書誌ID: BA21866324
• データソース種別:
  • CiNii Articles