Sequential lateral solidification of thin silicon films on SiO2

• Robert S. Sposili

  Department of Chemical Engineering, Materials Science, and Mining Engineering, Columbia University, New York, New York 10027

• James S. Im

  Department of Chemical Engineering, Materials Science, and Mining Engineering, Columbia University, New York, New York 10027

抄録

We report on a low-temperature excimer-laser-crystallization process that produces a previously unattainable directionally solidified microstructure in thin Si films. The process involves (1) inducing complete melting of selected regions of the film via irradiation through a patterned mask, and (2) precisely controlled between-pulse microtranslation of the sample with respect to the mask over a distance shorter than the single-pulse lateral solidification distance, so that lateral growth can be extended over a number of iterative steps. Grains up to 200 μm in length were demonstrated; in principle, grains of unlimited length can be produced. We discuss how the technique can be extended to produce large single-crystal regions on glass substrates.

収録刊行物

• Applied Physics Letters

  Applied Physics Letters 69 (19), 2864-2866, 1996-11-04

  AIP Publishing

キーワード

• Physics and Astronomy (miscellaneous)

詳細情報

• CRID: 1361699993877190016
• NII論文ID: 80009305550
• DOI: 10.1063/1.117344
• ISSN: 10773118
• ISSN: 00036951
• Web Site: https://pubs.aip.org/aip/apl/article-pdf/69/19/2864/18522695/2864_1_online.pdf
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