Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diodes

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  • Shuji Nakamura
    Department of Research and Development, Nichia Chemical Industries, Ltd., 491 Oka, Kaminaka, Anan, Tokushima 774, Japan
  • Masayuki Senoh
    Department of Research and Development, Nichia Chemical Industries, Ltd., 491 Oka, Kaminaka, Anan, Tokushima 774, Japan
  • Shin-ichi Nagahama
    Department of Research and Development, Nichia Chemical Industries, Ltd., 491 Oka, Kaminaka, Anan, Tokushima 774, Japan
  • Naruhito Iwasa
    Department of Research and Development, Nichia Chemical Industries, Ltd., 491 Oka, Kaminaka, Anan, Tokushima 774, Japan
  • Takao Yamada
    Department of Research and Development, Nichia Chemical Industries, Ltd., 491 Oka, Kaminaka, Anan, Tokushima 774, Japan
  • Toshio Matsushita
    Department of Research and Development, Nichia Chemical Industries, Ltd., 491 Oka, Kaminaka, Anan, Tokushima 774, Japan
  • Yasunobu Sugimoto
    Department of Research and Development, Nichia Chemical Industries, Ltd., 491 Oka, Kaminaka, Anan, Tokushima 774, Japan
  • Hiroyuki Kiyoku
    Department of Research and Development, Nichia Chemical Industries, Ltd., 491 Oka, Kaminaka, Anan, Tokushima 774, Japan

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<jats:p>Continuous-wave (cw) operation of InGaN multi-quantum-well structure laser diodes (LDs) was demonstrated at room temperature (RT). The threshold current and voltage of the LD were 130 mA and 8 V, respectively. The threshold carrier density was 9 kA/cm2. The lifetime of the LDs under RT cw operation was 1 s due to large heat generation. Mode hopping of the emission wavelength of the LDs was observed. The average wavelength drift due to temperature increase was 0.066 nm/K between 20 and 70 °C, because of the temperature dependence of the gain profile due to band-gap narrowing of the InGaN active layer.</jats:p>

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