Reducing source and drain resistances in InGaP/InGaAs doped-channel HFETs using δ-doping Schottky layers

• CHIU H. C.

収録刊行物

• Electronics Letters

  Electronics Letters 36 1320-1322, 2000

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• CRID: 1571698601668331008
• NII論文ID: 80011867487
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