The impact of intrinsic device fluctuations on CMOS SRAM cell stability

• A.J. Bhavnagarwala

• Xinghai Tang

• J.D. Meindl

収録刊行物

• IEEE Journal of Solid-State Circuits

  IEEE Journal of Solid-State Circuits 36 (4), 658-665, 2001-04

  Institute of Electrical and Electronics Engineers (IEEE)

キーワード

• Electrical and Electronic Engineering

詳細情報

• CRID: 1360011146414653312
• NII論文ID: 80012207040
• DOI: 10.1109/4.913744
• ISSN: 00189200
• Web Site: http://xplorestaging.ieee.org/ielx5/4/19725/00913744.pdf?arnumber=913744
• データソース種別:
  • Crossref
  • CiNii Articles