Si 3 N 4 / AlGaN/GaN –metal–insulator–semiconductor heterostructure field–effect transistors

DOI PDF 被引用文献49件
  • X. Hu
    Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208
  • A. Koudymov
    Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208
  • G. Simin
    Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208
  • J. Yang
    Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208
  • M. Asif Khan
    Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208
  • A. Tarakji
    Sensor Electronic Technology, Incorporated, Cavalier Way, Latham, New York 12110
  • M. S. Shur
    Sensor Electronic Technology, Incorporated, Cavalier Way, Latham, New York 12110
  • R. Gaska
    Sensor Electronic Technology, Incorporated, Cavalier Way, Latham, New York 12110

抄録

<jats:p>We report on a metal–insulator–semiconductor heterostructure field-effect transistor (MISHFET) using Si3N4 film simultaneously for channel passivation and as a gate insulator. This design results in increased radio-frequency (rf) powers by reduction of the current collapse and it reduces the gate leakage currents by four orders of magnitude. A MISHFET room temperature gate current of about 90 pA/mm increases to only 1000 pA/mm at ambient temperature as high as 300 °C. Pulsed measurements show that unlike metal–oxide–semiconductor HFETs and regular HFETs, in a Si3N4 MISHFET, the gate voltage amplitude required for current collapse is much higher than the threshold voltage. Therefore, it exhibits significantly reduced rf current collapse.</jats:p>

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