AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors using Sc_2O_3 as the gate oxide and surface passivation

• MEHANDRU R.

収録刊行物

• Appl. Phys. Lett.

  Appl. Phys. Lett. 82 (15), 2530-2532, 2003

詳細情報

• CRID: 1572261551640791168
• NII論文ID: 80015881980
• データソース種別:
  • CiNii Articles