Fabrication of ZnTe Light-Emitting Diodes Using Bridgman-Grown Substrates.

• Tanaka Tooru

  Department of Electrical and Electronic Engineering, Faculty of Science and Engineering, Saga University

• Kume Yusuke

  Department of Electrical and Electronic Engineering, Faculty of Science and Engineering, Saga University

• Nishio Mitsuhiro

  Department of Electrical and Electronic Engineering, Faculty of Science and Engineering, Saga University

• Guo Qixin

  Department of Electrical and Electronic Engineering, Faculty of Science and Engineering, Saga University

• Ogawa Hiroshi

  Department of Electrical and Electronic Engineering, Faculty of Science and Engineering, Saga University

• Yoshida Akira

  Department of Electrical and Electronic Engineering, Toyohashi University of Technology

抄録

We have succeeded in fabricating ZnTe light-emitting diodes (LEDs) using p-ZnTe substrate grown by the vertical Bridgman method. The substrate showed a full width at half maximum of the X-ray rocking curve of about 90 arcsec, and strong near-band-edge emission in the photoluminescence spectrum at low temperatures. pn-junction LED was fabricated by an Al diffusion technique. From the I-V curve, the turn-on voltage was found to be approximately 2 V. Pure-green electroluminescence was observed clearly at a wavelength of 550 nm at room temperature.

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 42 (4A), L362-L364, 2003

  The Japan Society of Applied Physics

キーワード

• ZnTe
• light-emitting diode
• pure-green electroluminescence
• Bridgman

詳細情報

• CRID: 1390001206256574208
• NII論文ID: 80015933103
• NII論文ID: 130004530538
• NII論文ID: 210000054886
• NII書誌ID: AA10650595
• DOI: 10.1143/jjap.42.l362
• ISSN: 13474065
• ISSN: 00214922
• NDL書誌ID: 6585357
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I6585357
• Web Site: http://stacks.iop.org/1347-4065/42/i=4A/a=L362/pdf
• 本文言語コード: en
• データソース種別:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
  • KAKEN
• 抄録ライセンスフラグ: 使用不可