Electrically Induced Optical Emission from a Carbon Nanotube FET

• J. A. Misewich

  IBM Research Division, IBM Thomas J. Watson Research Center, Yorktown Heights, NY 10598–0218, USA.

• R. Martel

  IBM Research Division, IBM Thomas J. Watson Research Center, Yorktown Heights, NY 10598–0218, USA.

• Ph. Avouris

  IBM Research Division, IBM Thomas J. Watson Research Center, Yorktown Heights, NY 10598–0218, USA.

• J. C. Tsang

  IBM Research Division, IBM Thomas J. Watson Research Center, Yorktown Heights, NY 10598–0218, USA.

• S. Heinze

  IBM Research Division, IBM Thomas J. Watson Research Center, Yorktown Heights, NY 10598–0218, USA.

• J. Tersoff

  IBM Research Division, IBM Thomas J. Watson Research Center, Yorktown Heights, NY 10598–0218, USA.

抄録

Polarized infrared optical emission was observed from a carbon nanotube ambipolar field-effect transistor (FET). An effective forward-biased p-n junction, without chemical dopants, was created in the nanotube by appropriately biasing the nanotube device. Electrical measurements show that the observed optical emission originates from radiative recombination of electrons and holes that are simultaneously injected into the undoped nanotube. These observations are consistent with a nanotube FET model in which thin Schottky barriers form at the source and drain contacts. This arrangement is a novel optical recombination radiation source in which the electrons and holes are injected into a nearly field-free region. Sucha source may form the basis for ultrasmall integrated photonic devices.

収録刊行物

• Science

  Science 300 (5620), 783-786, 2003-05-02

  American Association for the Advancement of Science (AAAS)

キーワード

• Multidisciplinary

詳細情報

• CRID: 1360292621131005440
• NII論文ID: 80015937071
• DOI: 10.1126/science.1081294
• ISSN: 10959203
• ISSN: 00368075
• Web Site: https://www.science.org/doi/pdf/10.1126/science.1081294
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