Metal–Ferroelectric–Insulator–Semiconductor Memory FET With Long Retention and High Endurance

• S. Sakai

• R. Ilangovan

収録刊行物

• IEEE Electron Device Letters

  IEEE Electron Device Letters 25 (6), 369-371, 2004-06

  Institute of Electrical and Electronics Engineers (IEEE)

キーワード

• Electrical and Electronic Engineering
• Electronic, Optical and Magnetic Materials

詳細情報

• CRID: 1360011144264075648
• NII論文ID: 80016702695
• DOI: 10.1109/led.2004.828992
• ISSN: 07413106
• Web Site: http://xplorestaging.ieee.org/ielx5/55/28937/01302229.pdf?arnumber=1302229
• データソース種別:
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  • CiNii Articles