Cat-CVD SiN-passivated AlGaN-GaN HFETs with thin and high Al composition barrier Layers

• M. Higashiwaki

• N. Hirose

• T. Matsui

収録刊行物

• IEEE Electron Device Letters

  IEEE Electron Device Letters 26 (3), 139-141, 2005-03

  Institute of Electrical and Electronics Engineers (IEEE)

キーワード

• Electrical and Electronic Engineering
• Electronic, Optical and Magnetic Materials

詳細情報

• CRID: 1363951795389004800
• NII論文ID: 80017256818
• DOI: 10.1109/led.2004.842736
• ISSN: 07413106
• Web Site: http://xplorestaging.ieee.org/ielx5/55/30402/01397839.pdf?arnumber=1397839
• データソース種別:
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  • CiNii Articles