Proceedings of the 14th International Conference on Defects in Semiconductors :[held in] Paris, France, August 18-22, 1986

著者

• International Conference on Defects in Semiconductors
• Bardeleben, H. J. von

書誌事項

Proceedings of the 14th International Conference on Defects in Semiconductors :[held in] Paris, France, August 18-22, 1986

edited by H. J. von Berdeleben

（Materials science forum, v.10-12）

Trans Tech Publications, c1986

• pt.1 :
• pt.2 :
• pt.3 :

タイトル別名

Defects in semiconductors

内容説明・目次

内容説明

Materials Science Forum Vols. 10-12

目次

Fundamental Defects in GaAs: Present and Prospective in GaAs Microelectronics Technology Hot Topics: Theory AB-Initio Theory of Defects in Crystalline and Amorphous Semiconductors Chalcogen and Vacancy Pairs in Silicon: Electronic Structure and Stabilities Electronic Structures of Substitutional Off-Center and Small-Aggregate Defects in Silicon by Semi-Empirical Green's Function Methods Selfconsistent Tight Binding Theory of Trends for Substitutional Transition Metal Ions in Si and GaAs Tight-Binding Study of the Silicon Divacancy Electronic Structure of Cationic Substitutional Cu, Ag, Au, and the Metal Vacancy in ZnS, ZnSe and CdTe Theoretical Model of Transition Metal-Shallow Acceptor Impurity Pairs in Silicon Calculation of the Spin-Polarized Electronic Structure of Si: Feoi in Super-Cell Full-Potential Linearized Augumented Plane Wave Method Tight Binding Calculations of Optical Cross Sections for Deep Level Defects in Semiconductors Accurate Prediction of Lattice Distortion for Complex Defects in Semiconductors: Extended Interstitials as Tests of Valence Force Potentials Effects of Doping and Alloying on Native Defects and Complex Formation in Hg1-x CdxTe The Electronic States of a Substitutional Ytterbium Impurity in Indium Phosphide Defect Calculations in a Modified Haldane-Anderson Model Electronic Structure of Neutral Complex Defects in Silicon High Temperature Investigations of Silicon by Means of Positron Annihilation Theoretical Determination of the Vacancy Migration Energy in Silicon Diffusion without Vacancies or Interstitials: A New Concerted Exchange Mechanism Germanium Impurity Diffusion in Boron Doped Silicon Diffusion of Tellurium in Silicon Behaviour of Substitutional Gold in Silicon Nature and Generation Mechanism of Butterfly-Type Intrinsic Gettering Centers in Oxygen-Free Silicon Crystals Distribution of Cobalt in Silicon after Phosphorous Diffusion Gettering Transient Defects Kinetics during Silicon Oxidation and Diffusion Phenomena Migration of Interstitial Boron in Silicon Solubility, Diffusion and Ion-Pairing of Cobalt in Extrinsic Silicon at 700 DegreesC Diffusion and Conductivity of Potassium Impurity in Silicon and Germanium An Overview of Electron Paramagnetic Resonance Studies of Si-SiO2 Interface States Manganese Luminescence in GaAs/GaAlAs Superlattices Capacitance and Current Spectroscopy of Perpendicular Transport in Compensated GaAs-GaAlAs Superlattices Characterization of Electron Traps in GaAs-GaAlAs Superlattices Defect Generation in the Initial Stages of Epitaxial Growth of GaAs on Silicon by MBE Atomic Imaging of Surface Defects on Si Influence of Strain on Silicon Surface and Silicon Oxide Interface Reconstruction Deep Level at Semiconductor Surfaces Charged Defect States at Silicon Grain Boundaries Bulk and Grain Boundary Defects in Polycrystalline ZnO The Role of Defect Production at Surface and Interface of CdHgTe and ZnHgTe Electronic Structure of As and P Antisite Defects and Ga Vacancy in GaP and GaAs EPR Spectra of AsGa Aggregates in GaAs Endor-Investigation of the Ga Vacancy in GaP Characterization of Vacancy Defects in As-Grown and Electron Irradiated GaAs by Positron Annihilation Triplet Spin ODMR from Phosphorous Antisites in Undoped InP Electronic Structure and Positron States at Vacancies in Semiconductors Search for the Full Atomic Structure of El2 in GaAs Bistability and Metastability of VGa in GaAs EPR Observation of the Arsenic Antisite - Arsenic Vacancy Complex A Model for the Atomic Configuration of the EL2 Defect in GaAs The Arsenic Antisite Defect in GaAs and Its Relation to EL2 Observation of New EL2 Related Properties in GaAs. Photodissociation Model of EL2 Metastability Optical Transition Mechanisms via Excited State and a New Configuration Coordinate Model for EL2 in GaAs The Energy Position of the EL2 Ground State in GaAs EL2 Characteristics of In-Doped Vapor Phase Epitaxy GaAs Layers AsGa-Asi-AsGa Complex as a Model of EL2 Centre in GaAs Optically-Assisted Thermal Anneal of Metastable Defects in GaAs Resonant Raman Scattering at Point Defects in GaAs Infrared Investigations of Persistent Carriers, Photo-Generated during EL2 Bleaching in GaAs ESR Studies of Semi-Insulating GaAs Crystals EL2 Quenching Behaviour in Infrared GaAs Transmission Images Introduction to Metastability: Configuration Coordinate Diagrams Trends in the Bistable Properties of Iron-Acceptor Pairs in Silicon Metastable States of the DX Center in AlxGa1-xAs Environmental Effects in DX (Te) Centers in GaAlAs Trapping Characteristics of the Dual States of the D-X Center in MBE Grown Si-Doped AlGaAs Trapping Characteristics and Analysis of Te-Related DX Centers in AlGaAs and GaAsP Effect of the Host Band Structure on Capture and Emission Processes at DX Centers in AlGaAs The Ge-Related DX Level in Sn/Ge-Doped AlxGa1-xAs Hetero-Junctions Grown by LPE A New Model of Deep Donor Centers in AlxGa1-xAs Optical Nuclear Polarization and Spin-Dependent Reactions in Semiconductors Evidence of "Coherent" Recombination on a Deep Center from Recombination Enhanced Defect Reactions Multiphonon Recombination by Bourgoin-Corbett Mechanism Uniaxial Stress DLTS of Iron-Acceptor Pairs in Silicon On the Behaviour of Hole Capture with Multiphonon Emission at Deep Level Defects H3 and H4 in p-GaAs Stress Effects of Deep Centers in Si, New Method to Determine Old Parameter Cathodoluminescence Contrast from Localized Defects in Semiconductors A Study of Electron Capture Cross Sections of A-Center and Gold Acceptor in Silicon under Uniaxial Stress Transition Metal Impurities-Induced Nonradiative Recombination Processes in the ZnS Lattice Zero-Phonon Line of Deep-Level Luminescence in GaAs Accurate Determination of Capture Time Constant of Interface States in MOS Structures Application of Optically Detected Magnetic Resonance to the Characterization of Point Defects in Semiconductors Constant Photo-EPR: A New Method for Deep Level Characterization Characterization of Deep Levels by Microwave Absorption Spectroscopy Profiling of Vacancy Defects in Ion-Implanted Si by Slow Positron Beam Analysis of the Electric Field Influence on the Emission Rate of the Te-Related Center in GaAs0.6P0.4 Optical Isothermal Transient Spectroscopy: Application to the Boron Implantation in GaAs Scanning Transmission Electron Beam Induced Current in Polycrystalline Silicon On the Formation of 111In-Donor Atom Pairs in Silicon as Observed by PAC Acceptor-Donor-Interactions in Silicon Studied by the Pac-Method Hydrogen Behavior and Hydrogen-Related Defects in Single Crystal Silicon Hydrogen Diffusion and Hydrogen-Dopant Reactions in Crystalline Silicon Photoluminescence Detection of the Shallow Impurity Neutralization in GaAs Selective Hydrogen Passivation of Oxygen-Related Thermal-Donor Clusters in Silicon Correlation between Hydrogen Diffusion and Donor Neutralization in Hydrogenated n-GaAs: Si In Studies of the Electron-Irradiated Silicon Crystal Grown in Hydrogen Atmosphere The Optical Cross-Section of 3d Impurity Induced Transitions in III-V and II-VI Semiconductors Transition-Metal Luminescence in III-V Alloys The Importance of Random Strain in Deep Level Jahn-Teller Systems Studied by TD-EPR Identification of the Co1+ Double Acceptor State in GaAs Spectroscopy of GaAs and InP Grown in the Presence of Rare Earth Elements Vanadium in GaAs and GaP Properties of Titanium in GaAs and InP Study of Transition Metal Deep Donor Levels in InP The Donor Level Ti3+/Ti4+ in InP: Electrical and Optical Properties Study of the Cr 2+ Luminescence in GaAs as a Function of Hydrostatic Pressure Optical, Electrical and EPR Studies of GaAs:Ni The Luminescence at 0.844 eV in GaAs:Cr - A Zeeman Spectroscopy Optical Detection of Magnetic Resonance in the Optically Excited 2F5/2-State of Yb3+ in InP On the Evidence for the Effect of Local Symmetry on the Photoionization Spectrum of Fe2+ in InP Non-Stationary Infrared-Optical Processes Involving Deep Impurities in III-V Compound Semiconductors Optically-Detected Magnetic Resonance of Gold Centres in Zinc Selenide Structure of Pd, Pt and Au Impurities in Silicon: The Energy Levels under Uniaxial Stress and Hydrostatic Pressure Interstitial 3d Transition Metal Impurities in Silicon: An Ab Initio Cluster Study Photoluminescence Studies on Gallium-Related Deffects in Silicon Identification of the Energy Levels of Si:Pd by DLTS Electrons of 3d Transition Metals in Silicon High Resolution Transmission Electron Microscopy of Semiconductors and Their Defects Classification of Defects in Plastically Deformed Silicon The Growth Mechanism of Dislocation Loops in Arsenic Implanted Silicon The Role of Point Defects in the Nucleation of Film Edge Induced Dislocations in Silicon Structural Features in the Photoluminescence from Widely Dissociated Straight Partial Dislocations in Silicon Defect-Related Luminescence in Molecular Beam Epitaxy Grown CdTe Films* Structure of Dislocations in Plastically-Deformed, High Purity GaAs Dislocation Substructures and Plasticity of GaAs below 400 DegreesC as a Function of Doping The Electrical Activity of Dislocation Slip Planes in Semiconductor Crystals TEM Observation of Dislocations in In Doped GaAs after High Temperature Plastic Deformation Dislocations in Plastically Deformed GaAs:Cr Thermal Conductivity Measurements Glide of and Dislocations in GaAs Plasticity of Cd0.66 Hg0.34 Te TEM Observations of Dislocations Dangling Bonds in a Dislocation Core in Ge. Do They Exist? On the Mobility of 1/6 (112) Partial Dislocations under High Stress in Semi-Insulating GaAs ODMR Observation of Close Frenkel Pairs in Electron-Irradiated ZnSe Electrical Compensation, Electron and Hole Traps in Electron Irradiated ZnSe Radiation Damage Experiments with ZnO at Low Temperatures Saturation Spectroscopy and Fluorescence in ZnO:Co2+ ODMR-MCD Study of the Zinc Vacancy and Related Complexes in ZnSe Photoluminescence Spectroscopy of Proton Implantation Induced Defects in CdTe and ZnTe Acceptors and Donors in the Wide-Gap Semiconductors ZnO and SnO2 On the Influence of Doping and Annealing on Oxygen-Related Defects in Silicon The Electronic Structure of the Oxygen-Vacancy Complex in Silicon Influence of Oxygen Precipitates on the Solution of Transition Metals in Silicon Enhanced Oxygen Diffusion in Silicon at Low Temperatures The 3942 cm-1 Optical Band in Irradiated Crystalline Silicon N-Concentration Dependence of Thermal Annealing Behavior of Substitutional N Impurities in Pulsed-Laser Annealed Silicon Theoretical Investigation of Deep Level Complexes Related to Carbon and Oxygen Impurities in Silicon Chalcogen Double Donors in Silicon The Ultraviolet Absorption due to Single Substitutional Nitrogen in Diamond The ESR Investigation of a Singly Ionized Sulphur Centre in Ib Diamonds Electronic and Vibrational Absorption of Interstitial Carbon in Silicon Ion-Implanted Oxygen Isotopes in Silicon Far-IR Spectroscopy of Oxygen Donors in Germanium Identification of the Carbon Associated Radiation Damage Levels in Silicon Thermal Donors in Silicon - 1986 Preferential Alignment of Thermal Donors in Si Time Resolved Study of Thermal Donor Related Luminescence Lines in Silicon Effects of 450 DegreesC Thermal Annealing Upon Oxygen Precipitation in B-Doped CZ Si Wafers Evidence for an Inhomogeneous Distribution of Thermal Donors in Silicon from Electrical and Optical Measurements The New Donors in Silicon: The Effect of the Inversion Layers Surrounding Precipitates Early Stage of the New Donors Formation in Cz-Silicon Properties of the Shallow Thermal Donors in CZ-Silicon as Studied by Photothermal Ionization Spectroscopy (PTIS) Electronic Properties of Deep Level Defects in Thermally Annealed CZ Silicon Oxygen Endor of Thermal Donors in Silicon A Model for the Density of Oxidation Induced Stacking Faults in Silicon Enhanced Oxygen Diffusion in Silicon at Thermal Donor Formation Temperature Radiative Defects in Electron Irradiated InP Thermal Transformation of the Electron-Irradiation-Induced Defect H4 in p Type InP Study of Electron Irradiation-Induced Defects in N-Type Active Layer of GaAs Mesfet Electron Microscope Observation of Highly Disordered Regions in Neutron Irradiated Germanium Climbing of Nearly Screw Dislocations in InSb Thin Foils Irradiated in a High Voltage Electron Microscope Comparison of Electron Paramagnetic Resonance and Transport Data during Thermal Recovery of Fast Neutron Irradiated GaAs Endor Study of Radiation Induced Defects in Semi-Insulating GaP Low Temperature Electron Irradiation Induced Defects in N-GaSb Electron Hopping between Bombardment Induced Defects in Gallium Arsenide Ga Antisite Defects in Neutron Irradiated and Annealed GaAs? Annealing of Irradiated Highly Phosphorous-Doped Czochralski Silicon Cu-Related Deep Levels in Si and the Interaction between Cu and Irradiation Defects Subthreshold Radiation Damage in Silicon: Carbon Isotope Measurements on Cs-SiI-Cs Complexes Experimental Study of Divacancy in Silicon New Impurity-Defect Reactions in Silicon Photoluminescence Study of Fe2+ in InP1-xAsx:Fe Alloys Electron Microscopy Data for Threshold Energy of Point Defect Creation in Silicon Beam-Induced Annealing of Defects Created by Imlantation at 30 K in Si Annealing Behaviour of High Concentration of Sn and Sb Implanted in Silicon Structural Defects in Ion-Implanted Silicon Observed by Perturbed Angular Correlation Defects Related to Nitrogen Implantation in Silicon Single Crystals Precipitate Morphologies in Oxygen - Ion Implanted Silicon: A High Resolution Electron Microscopy Study Dose Dependence of Defects in Silicon Produced by High Dose, High Temperature O+ Implantation Investigation of the Lattice Defects in P Ion Implanted Silicon Interaction of Point Defects with Implanted Hydrogen in Undoped Germanium Evolution of Defect Structures around Te Implanted in GaAs during Solid Phase Epitaxial Regrowth As-Implanted Lattice Sites of Dopants in Semiconductors Defect Structures in Ion-Implanted InSb Defects and Optically Active Transition and Rare Earth Elements in III-V and II-VI Semiconductors and Diamond Zn-Impurity-Induced Structual Disorder in AlGaAs Alloy Study of Deep Levels in AlyGaxIn1-x-y P Material Grown by Movpe Effects of Annealing on Electron Trap and Free Carrier Concentration in n-Type GaAs Donor Identification in Bulk Gallium Arsenide Observation of Stoichiometry Changes Beneath Metal Contacts on GaAs Photoluminescence Studies near Residual Dislocations in In-Alloyed GaAs Spatial Distribution of Point Defects and Complexes in Semi-Insulating LEC and Si-Doped GF Grown GaAs Crystals Detection of Non Stoichiometric Vacancy Defects in CdTe, HgTe and Hg1-x CdxTe by Positron Annihilation Native Defects in -Sic Photoluminescence of Defects Produced by Reactive Ion Etching of Silicon Semi-Insulating Behavior in Undoped LEC InP after Annealing in Phosphorous Radiative Recombination Mechanism of Deep Levels in GaAs

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詳細情報

• NII書誌ID(NCID): BA01066019
• ISBN:
  • 0878495517
  • 0878495517
  • 0878495517
• 出版国コード: sw
• タイトル言語コード: eng
• 本文言語コード: eng
• 出版地: Aederlmannsdorf, Switzwelns
• ページ数/冊数: 3 v.
• 大きさ: 25 cm
• 親書誌ID:
  • BA00294222