Physics of solid surfaces, 1987 : proceedings of the Fourth Symposium on Surface Physics, Bechyne Castle, Czechoslovakia, 7-11 September 1987

書誌事項

Physics of solid surfaces, 1987 : proceedings of the Fourth Symposium on Surface Physics, Bechyne Castle, Czechoslovakia, 7-11 September 1987

editor, J. Koukal

(Studies in surface science and catalysis, 40)

Elsevier, 1988

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注記

Includes bibliographies and index

内容説明・目次

内容説明

The Fourth Symposium on Surface Physics was held to summarize important new developments in theoretical and experimental studies of solid surfaces. In recent years, the physical and chemical properties of surfaces and interfaces have been extensively investigated. This meeting was mainly devoted to the crystallographic and electron structure aspects of surface physics, and to a detailed understanding of the electronic, structural and magnetic properties of clean surfaces, and adsorbed aggregates on surfaces and interfaces. New and newly-refined techniques were presented and discussed. This proceedings volume comprises three main parts: the first contains the invited lectures indicating the main topics of the meeting; the second and third parts summarize the oral papers and posters in a more condensed form.

目次

  • Invited Papers. Recent progress in structure determination by LEED (M.A. Van Hove, G.A. Somorjai). Scanning tunneling microscopy (M.S. Khaikin et al.). Low energy electron microscopy and normal incidence VLEED (E. Bauer). NEXAFS and SEXAFS of chemisorbed low-Z atoms and molecules (J. Haase). Structure and composition of alloy surfaces by LEED (Y. Gauthier). X-ray photoelectron diffraction (Ch.S. Fadley). The recent understanding of the defect structure at semiconductor interfaces (H. Flietner). Recent progress in the electron theory of solids and their surfaces: the tight-binding muffin-tin orbital method (J. Kudrnovsky, V. Drchal). Theoretical aspects of electron damping (I. Bartos). Angle-resolved Auger electron spectroscopy (ARAES) for (110) nickel face clean and covered with sulphur (S. Mroz et al.). Theories of crystal surface melting and non-melting (E. Tosatti et al.). Structural phase transitions and their relation to electronic and dynamic properties of Si(110) face (B.A. Nesterenko et al.). Thermodynamic aspects of surface defects. First-principle calculations (M. Scheffler). Photoelectron spectroscopy of small particles and thin films of s- and d- metals
  • size effect in their electronic structure (G.A. Katrich, A.G. Naumovets). Ion mixing of metal superlattices (P. Mikolajczak, G. Gladyszewski). Clean semiconductor surfaces covered by Ag at low temperatures (V.A. Grazhulis). Theory of thermal energy He scattering from adsorbates (B. Gumhalter). Interfaces and layered structures (quantum wells and superlattices) (F. Garcia-Moliner). Recent developments in photoemission (K.C. Prince). Unoccupied electron states at clean and adsorbate covered surfaces (V. Dose). Tunneling and mesoscopic fluctuations in quantum Hall effect (V.L. Pokrovsky et al.). Optical spectroscopy of semiconductor surface (V.I. Safarov et al.). Short Contributions. FEM study of the metal-insulator-metal system (J. Sotola, Z. Knor). Structure optimization by means of total energy calculation for X(111)2x1 and X(100)2x1 surfaces (X=C, Si, Ge, a-Sn) (F. Bechstedt, D. Reichard). XPS study of chemisorption of carbon monoxide and oxygen on dysprosium (Z. Bastl et al.). Adsorption of Cs on Th(100) - phases and phase transitions (K. Heinz et al.). Defect structure characterization of MBE-grown GaAs(001) surfaces by RHEED intensity profile analysis (L. Daweritz et al.). About the segregation of phosphorus on an iron(111) surface (W. Arabczyk et al.). High resolution electron energy loss spectroscopy study of the interaction of oxygen with a Mo(111) surface (P. Stefanov, Ts. Marinova). Time evolution of atomic state occupations during ion-surface scattering (K.J. Snowdon, A. Narmann). A Gaussian wave packet method for studying dissociation of diatomic molecules on solid surfaces (J. Gryko). Angle-resolved photoemission of the initial stages of interface formation between Pb and Si(111)7x7 (G. Le Lay et al.). The photoelectron study of surface states on InP(100) (V.

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