書誌事項

Reflection high-energy electron diffraction and reflection electron imaging of surfaces

edited by P.K. Larsen and P.J. Dobson

(NATO ASI series, ser. B . Physics ; v. 188)

Plenum Press, c1988

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注記

"Proceedings of a NATO Advanced Research Workshop on Reflection High-Energy Electron Diffraction and Reflection Electron Imaging of Surfaces, held June 15-19, 1987, in Veldhoven, The Netherlands"--T.p. verso

"Published in cooperation with NATO Scientific Affairs Division."

Includes bibliographical references and index

内容説明・目次

内容説明

This volume contains the papers presented at the NATO Advanced Research Workshop in "Reflection High Energy Electron Diffraction and Reflection Electron Imaging of Surfaces" held at the Koningshof conference center, Veldhoven, the Netherlands, June 15-19, 1987. The main topics of the workshop, Reflection High Energy Electron Diffraction (RHEED) and Reflection Electron Microscopy (REM), have a common basis in the diffraction processes which high energy electrons undergo when they interact with solid surfaces at grazing angles. However, while REM is a new technique developed on the basis of recent advances in transmission electron microscopy, RHEED is an old method in surface crystallography going back to the discovery of electron diffraction in 1927 by Davisson and Germer. Until the development of ultra high vacuum techniques in the 1960's made instruments using slow electrons more accessable, RHEED was the dominating electron diffraction technique. Since then and until recently the method of Low Energy Electron Diffraction (LEED) largely surpassed RHEED in popularity in surface studies. The two methods are closely related of course, each with its own specific advantages. The grazing angle geometry of RHEED has now become a very useful feature because this makes it ideally suited for combination with the thin growth technique of Molecular Beam Epitaxy (MBE). This combination allows in-situ studies of freshly grown and even growing surfaces, opening up new areas of research of both fundamental and technological importance.

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