Amorphous and crystalline silicon carbide and related materials : proceedings of the First International Conference, Washington DC, December 10 and 11, 1987
著者
書誌事項
Amorphous and crystalline silicon carbide and related materials : proceedings of the First International Conference, Washington DC, December 10 and 11, 1987
（Springer proceedings in physics, v. 34）
Springer-Verlag, c1989
- : U.S.
- : Germnay
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注記
"Papers presented at the First International Conference on Amorphous and Crystalline Silicon Carbide and Related Materials (ICACSC 87), which was held at Howard University"--Pref
Sponsored by the National Science Foundation et al
Includes index
内容説明・目次
内容説明
Although silicon carbide has been used for more than half a century, its potential as a high-temperature, corrosion-resistant semiconductor has only recently begun to be exploited. Both crystalline and amorphous forms of SiC offer several advantages over Si, GaAs, and InP for high-frequency, high-power, and high-speed circuits. This volume contains reports on high-temperature SiC MOSFETs and MESFETs, secondary harmonic generation in SiC, a-SiC emitter heterojunction bipolar transistors, and bulk crystal growth of 6H-SiC. For newcomers to the field it provides an up-to-date review of technological developments in SiC and related materials, while specialists will find here recent references and new insights into materials for high-temperature, high-power, and high-speed circuit applications.
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