Gallium arsenide : proceedings of the Third Conference on Physics and Technology of GaAs and other III-V Semiconductors, held in Tatranská Lomnica, Czechoslovakia, November 28-December 2, 1988
著者
書誌事項
Gallium arsenide : proceedings of the Third Conference on Physics and Technology of GaAs and other III-V Semiconductors, held in Tatranská Lomnica, Czechoslovakia, November 28-December 2, 1988
Trans Tech Publications, c1988
- タイトル別名
-
Gallium arsenide III : The physics and technology of Gallium Arsenide and other semiconductors
大学図書館所蔵 件 / 全3件
-
該当する所蔵館はありません
- すべての絞り込み条件を解除する
内容説明・目次
内容説明
Proceedings of the 3rd International Conference on Physics & Technology of GaAs and other III-V Semiconductors, Lomnica, CSFR, December 1988
目次
Empirical Relations for Tetrahedrally Coordinated Semiconductors
Evidence for the Dislocation-Induced Deep Traps in GaAs
X-Ray Diffractometry of Very Thin LPE InGaAsP and InP Layers
Low Temperature Photoluminescence Characterization of Acceptors in Vapour Phase Epitaxial GaAs
Deep Levels in Sl GaAs Crystals by Spectral Photoconductivity and Photoluminescence
Deep Levels in GaAs1-XPX under High Hydrostatic Pressure
Ion Beam Bombardment Induced Composition Changes at the GaAs Surface Investigated by AES
Photoluminescence Study of Ge-Doped GaAs Grown by Liquid-Phase Epitaxy
Dopant Influence on Structure Perfection of GaAs Single Crystals
Dislocation Density of Doped GaAs Single Crystals Grown by HB Method
Pecularities of Point Defects Structure in Single Crystals of InP:HALL Data
Dynamics of Avalanche-Like Electron Heating, Relaxation Oscillations and Chaotic Response Behaviour in Multilayer Heterostructures
Hole Transport in GaSb with Isovalent Doping by In and N
The Influence of Barrier Unintentional Impurities on Characteristics of Two Dimensional Electron Gas at GaAs/AlGaAs Heterojunction
The Novel Nonquilibrium Electron-Hole System at GaAs-Electrolyte Interface
Transport Effects in Space Grown p-Type GaSb Crystals
Transport Coefficients for Non Polar Optical Phonon Scattering
X-Ray Topographic Investigation of Dislocations in Horizontal Bridgman Grown GaAs Crystals
Photoelastic Investigation of Czochralski-Grown [100] Oriented GaAs Crystals
The X-Ray Investigation of Defects in Heavy Indium Doped GaAs Crystals
Photoluminescence Topography of GaAs:Si Single Crystal
Bismuth-Related Band in LPE GaAs
EM Investigation of the Fine Defects Formation Processes in A3B5 Crystals
X-Ray Diffraction Study of AIIIBV Materials
Monte Carlo Study of Real-Space Electron Transfer: Energy Exchange between Heterostructure Layers
Hot-Electron Transport in Multilayer InP-InGaAsP Heterostructure
The Application of the Monte-Carlo Method to Physical Phenomena Modelling in Optoelectronic Devices (with LED as an Example)
Miscibility GAPS in III-V Alloys: An Explanation
Observation of Immiscibility in InGaPAs on GaAs Substrates
Effect of Exchange Interaction on the Features of MnGa Center in GaAs
GaAs MBE-Grown Delta-NIPI Superlattices: Observation of Quantum-Confined Optical Transitions in Photocurrent Spectra
Growth Mechanism of Thin AlGaAs and InGaAsP Layers
Diffusion of Zinc into III-V Compounds in Open Gas-Flow System
The Czochralski Growth of GaSb Single Crystals
Rapid Thermal Annealing of Neutron Transmutation Doped GaAs
GaAs Lift-Off Metallization by Electron Beam Evaporation
Features of GaAs Disordering by Nitrogen Ion Implantation
The Silicon Nitride Layers Prepared by PE CVD for GaAs IC Technology
Short Time Annealing of GaAs Implanted with Si, Ge, Sn, Se, S, Te
ECR-Silicon Nitride for Masking of GaAs Surface
The Ion Implantation through Thin Dielectric Layer
Composition and Properties of Some Low Temperature Oxide Layers on GaAs (001) in MBE Technology
Passivating Films on the AIIIBV Substrate Surfaces
Some Properties of the Isoelectronically Doped GaAs Crystals Grown by the Gradient Freeze Method
Microdefects in the Heavily Silicon Doped GaAs Crystals Grown by the Gradient Freeze Method
Properties and Technology Features of Neutron Transmutation Doped Gallium Arsenide
Preparation and Properties of Reactively Sputtered TiN Films for Diffusion Barriers on GaAs
Rapid Thermal Annealing of Si-Implanted GaAs Using an Overpressure Proximity Method
Contribution to Ion Implantation of Ge in GaAs
Influence of Nintrogen Ion Implantation on Electrical Properties of Si Implanted Layers in GaAs
The Growth of High Purity GaAs by Liquid Phase Epitaxy
The Influence of Postimplantation Annealing on Stresses in GaAs Wafers
MO CVD of GaAs
Preparation of Undoped InGaAs/InP LPE Layers
The Application of Thermodynamics to CVD Processes of A(III)B(V) Semiconductors
Zn Diffusion in InGaAs
The Influence of Dual Implantation on Electrical Parameters of GaAs for MMICs
Photochemical Etching of n-GaAs
Description of a Technological Laser Usable for Preparation of Ohmic Contacts to n-GaAs by Graded GAP Heterojunction Method
Modeling of High-Speed GaAs Devices
Technology and Characterization of a Submicrometer Gate Length GaAs MESFETs
Effect of Substrate on Physical Properties of GaAs MESFETs
Microwave Monolithic Integrated Circuits on GaAs
The Influence of Technological Parameters on the Microwave Properties of Low Noise GaAs-MESFETs
Study of GaAs Vertical Buried-Gate Field-Effect Transistor
Self-Formation for High Speed MESFET Fabrication
Domination of the Thermionic-Field Emission in the Reverse I-V Characteristics of n-Type GaAs-Cr/Au Schottky Junctions
Schottky Barrier Height of Metal/(P)Ga0.47In0.53As Structures
The Effect of the Near-Interface Concentration Change on the C-V Characteristics of GaAs Schottki Contacts
The Analysis of Parasitic Effects and their Influence on Performance of GaAs MESFETs
A Model of GaAs MESFET
Effect of Varactor Bonding and Package Parameters on the Performance of Gunn-Oscillators
Preparation and Properties of GaAs Double-Schottkiy-Interdigitated Photodetectors
Planar Photodetectors: Construction and Properties
GaAs - A Favourable Material for Optoelectronic Switches with Picosecond Response Time
Linear Photovolatic Effect in Gallium Arsenide in Submillimeter Wavelength Region
Electrical and Photoelectric Properties of GaAs Permeable-Base Transistor
Reliability Diagnostics and Reliable Laser Design
1.3 and 1.55 M Wavelength GaInAsP/InP DC PBH Lasers
Comparison of Basic Parameters of Some Available Pulsed Semiconductor Lasers
Sources and Detectors of Radiation Based on GaSb for 2 m Range
Temperature Stimulation of Degration Processes in GaAs0.6P0.4 LEDs
TV Investigation of the Spontaneous Radiation in (Ga,Al)As Laser Diodes
Hall Generators on GaAs:Si(:Se,:Sn)
「Nielsen BookData」 より