Ion implantation in semiconductors

Author(s)

• Stievenard, D.
• Bourgoin, J. C.

Bibliographic Information

Ion implantation in semiconductors

D. Stievenard, J. C. Bourgoin

Trans Tech Publications, c1988

Note

"Previously published in Diffusion and Defect Data Pt. B: Solid State Phenomena"--T.p. verso

Description and Table of Contents

Description

The volume presents approximately 30 invited contributions.

Table of Contents

Characterization of Ion-Implanted Heavily-Doped Silicon by Optical Reflection Modeling of Oxygen Depth Profiles in High Dose Oxygen-Implanted Silicon Channeling, RBS and Moessbauer Measurements on 151Eu Implanted Si Cross-Sectional Transmission Electron Microscope Study of Bf2+-Implanted (001) and (111) Silicon EBIC-Investigation of the Dislocation-Impurity Interaction in Silicon Dopant Anomalous Diffusion Induced in Silicon by Ion Implantation Electrical Characterization of Buried Layers in Silicon Mechanism of Buried Oxide Formation by Implanted Oxygen Diffusion of Ion-Implanted Group III and V Impurities in SlO2 Annealing of Implants Reduces Lattice Defects and 1/f Noise Formation and Optimization of Shallow Junctions by Ion Implantation and Rapid Thermal Annealing for CMOS Application Fabrication of Nanometer Doping Structures by Secondary Implantation The Use of Ion Implantation for Lifetime Control in Silicon Devices Silicon Surface and Interface Damage Studies Using Ion Implantation Recoil Implantation for Shallow Junction Formation in Silicon Defects in SIMOX Structures A Review of Deep Levels in Donor-Ion Implanted GaAs Ion Implantation in GaAs Rapid Isothermal Annealing of Ion Implanted Gallium-Arsenide Defects and Doping Effects in CdTe and CulnS2 by Phosphorus Ion Implantation and Pulsed Electron Beam Annealing Implantation of Silicon in Indium Phosphide for Metal Insulator Semiconductor Transistors Thermal Annealing of Be Implanted InSb Range of Various Implanted Ions in III-V Materials The Compositional Disordering of AlGaAs/GaAs Superlattices by Si and Be Ion Implantation Low-Energy Hydrogen-Ion Implantation in Zinc Oxide Optical Properties of Hydrogen-Implanted Semiconductors Structure of Radiation Damage in Germanium Induced by Te+-Implantation Near Channeling Conditions

by "Nielsen BookData"

Details

• NCID: BA07383681
• ISBN:
  • 0878495754
• Country Code: sz
• Title Language Code: eng
• Text Language Code: eng
• Place of Publication: Aedermannsdorf, Switzerland
• Pages/Volumes: v, 473 p.
• Size: 25 cm