Structure and properties of dislocations in semicondutors 1989 : proceedings of the Sixth International Symposium on the Structure and Properties of Dislocations in Semiconductors held at the University of Oxford, 5-8 April 1989

Author(s)

• International Symposium on the Structure and Properties of Dislocations in Semiconductors
• Roberts, S. G.
• Holt, D. B.
• Wilshaw, P. R.

Bibliographic Information

Structure and properties of dislocations in semicondutors 1989 : proceedings of the Sixth International Symposium on the Structure and Properties of Dislocations in Semiconductors held at the University of Oxford, 5-8 April 1989

edited by S.G. Roberts, D.B. Holt, and P.R. Wilshaw

（Institute of Physics conference series, no. 104）

Institute of Physics, c1989

Note

Includes bibliographical references

Details

• NCID: BA07602424
• ISBN:
  • 0854980601
• LCCN: 89024491
• Country Code: uk
• Title Language Code: eng
• Text Language Code: eng
• Place of Publication: Bristol ; New York
• Pages/Volumes: xii, 470 p.
• Size: 25 cm
• Classification:
  • LCC : QC611.6.D4
  • DC20 : 537.6/221
• Subject Headings:
  • LCSH : Semiconductors -- Defects -- Congresses
  • LCSH : Dislocations in crystals -- Congresses
  • LCSH : Dislocation in metals -- Congresses
• Parent Bibliography ID:
  • BA00171324