Proceedings of the 15th International Conference on Defects in Semiconductors : Budapest, Hungary, August 22-26, 1988

著者

• International Conference on Defects in Semiconductors
• Ferenczi, G. (György)

書誌事項

Proceedings of the 15th International Conference on Defects in Semiconductors : Budapest, Hungary, August 22-26, 1988

edited by G. Ferenczi

（Materials science forum, v. 38-41）

Trans Tech Publications, c1989

• pt.1 :
• pt.2 :
• pt.3 :

タイトル別名

Defects in semiconductors

内容説明・目次

内容説明

Materials Science Forum Vols. 38-41

目次

Impact of Defects on the Technology of Highly Integrated Circuits Defects and Future Semiconductor Devices Configurations and Properties of Hydrogen in Crystalline Semiconductors Defect Metastability and Bistability The EL2 Defect in GaAs Magneto-Optical and ODMR Investigations on Intrinsic and Extrinsic Defects in GaAs Defects Induced by Reactive Ion Etching (RIE) in GaAs and Correlation with EL2 ESR-Spectra of Defects in Plastically Deformed GaAs The Temperature Dependence of the Hole Ionization Cross Section of EL2 in GaAs Metastable to Stable EL2 Regeneration via an 'Auger' Mechanism Induced by the Debye Tail EL2 and the Electronic Structure of the AsGa-ASj Pair in GaAs: The Role of Jahn-Teller Relaxation and Coulomb Interaction The EL2 Defect and the Isolated Arsenic Antisite Defect in GaAs EL2 - Intracenter Absorption under Hydrostatic Pressure Infrared-Induced Paramagnetic Centres in GaAs and Properties of Metastable EL2 Anisotropy and Isotropy of Electric Field Effects for the EL2 and E3 Defects in GaAs Correlation Effects in Native Defects in GaAs A Local Vibration Mode Absorption Study on the Metastability of EL2 Centres in GaAs Generation Process of EL2 Centers in GaAs Characterization of EL2 Level in As-Grown GaAs Prepared by MBE Interstitial Defect Reactions in Silicon Carbon-Related Processes in Crystalline Silicon Oxygen-Carbon Interactions in Silicon: Photoluminescence Defect Spectrum at 1.06 eV Emission Energy Peculiarities of Behavior of Irradiated Heat-Treated Si On the Role of Point Defects in Gettering Processes The Dominant Recombination Centres in Proton-Irradiated Silicon after Long-Term Annealing Deep Levels in Silicon as a Result of CoSi2 Formation Precipitation Phenomena in CMOS Technology Formation of SiOX Precipitates in Technological Silicon Wafers during Heating Processes: Investigations with Infrared Spectroscopy Influence of Defects on the Impurity Diffusion in SIMOX Structures Defects in High-Dose Oxygen Implanted Silicon Conventional and Rapid Thermal Annealing Induced Defects in Czochralski Silicon Quenched-In Defects in Thermally Treated and Pulsed Laser Irradiated Silicon Effects of Boron Doping on the Annealing Characteristics of Cz-Silicon Influence of Hydrostatic Pressure on Deep Levels in Silicon Induced by Annealing Impact of Volume Defects on Gold Gettering in Cz-Si Wafers Parallel Stress and Perpendicular Strain Depth-Distributions in [001] Silicon Amorphized by Ion Implantation Defects in Amorphous Silicon Theory of 4d Transition-Metal Ions in Silicon: Total-Energies, Diffusion, Electronic and Magnetic Properties Green's-Function Calculation of the Formation Entropy of a Vacancy in Silicon Equilibrium Geometries and Electronic Structure of Oxygen Related Defects in Silicon Screening of the Coulomb Interaction and Transition Metal Energy Levels Pinning to the Semiconductor Neutrality Level One- and Two-Oxygen Defects in Silicon - A Theoretical Study Localized Resonant State and Its Appearance in Energy Gap in Pressurized GaAs Computation of Hyperfine Interactions for Substitutional Se+and S+ Impurities in Silicon Parameter-Free Calculations of the Pressure Dependence of Impurity Levels, Entropies and of Defect-Formation Volumes Detecting the Dynamic Aspect of the Jahn-Teller Coupling for the V3 Defect in GaAs Electronic Structure of Nitrogen NN-Pairs in GaP from Excitation and Zeeman Spectroscopy Localized Defect States in Tetrahedrally Bonded Semiconductors Cluster Ab Initio Calculation of the Localized Lattice Excitations due to Interstitial Oxygen in Silicon Computation of Structure, Stability and Gap States for Core Models of the Oxygen Thermal Donors in Silicon Fluorine-Silicon Reactions and the Etching of Crystalline Silicon Photothermal Ionization Spectroscopy The Electronic Structure of Platinum, Palladium and Nickel in Silicon Time Resolved Photoluminescence Measurements on Noble Gas Related Defects in Silicon Perturbed Angular Correlation Spectroscopy of In-Li Pairs in Silicon Electronic Characterization of Defects in Iron-Doped P-Type Silicon Photoluminescence from Defects in Silicon Grown by Molecular Beam Epitaxy Electronic Energy Level of Off-Center Substitutional Nitrogen in Silicon The Multiconfigurational Carbon-Antimony Pair in Silicon Excitation Spectrum of the Interstitial Iron Donor in Silicon Shift and Splittings of Three Palladium-Related Deep Levels in Silicon under Uniaxial Stresses and the Symmetries of Their Corresponding Centers Bistability of Iron-Group III Acceptor Pairs in Silicon 3d-4d Transition Metal Complex Formation in Silicon Photoluminescence from Transition Metals in Silicon Volume Relaxation and Pressure Coefficients of Interstitial 3d-Defects in Silicon Photoluminescence Study of Nickel Doped Silicon Tin Related Defect in Electron Irradiated n-Type Silicon Studied by DLTS Electron Paramagnetic Resonance Studies of Defects in Indium-Doped Silicon Infrared Absorption Studies of the Divacancy in Silicon-New Properties of and Interpretation of the 0.34 eV Peak Physical Behaviour of 4d Transition Metal Impurity in Silicon Level Splitting of the Cd-Ground State in Silicon Temperature Dependence of the Capture Cross Section of Seo as Measured by Microwave Absorption Spectroscopy (MAS) Metastable Thermal Donor States in Germanium Identified by Far-IR Spectroscopy A Metastable Precursor to the Di-Carbon Centre in Crystalline Silicon The Bistability of Thermal Donors in Silicon Investigated by Infrared Spectroscopy Pressure Studies of 'Resonant' Metastable Localized Electron State in Heavilly Doped O-GaAs Entropy-Driven Metastable Defects in Silicon Chemical Trends in II-VI Semiconductors Doped with 3d Impurities Electrical Properties of Twinned ZnSe: P-Type Conductivity and Chaos Deep Levels due to Transition Metal Impurities in CdTe Time Resolved Spectroscopy of Deeply Cu-Bound Excitons in ZnS Photoexcitation and Relaxation Mechanism of Electrons in Narrow Gap Semiconductors Doped with Amphoteric Deep Impurities Identification of Interstitial Copper and Its Pair with Substitutional Copper in Germanium Electronic Structure of 3d Transition-Atom Impurities in Zinc Selenide Study on the Compensation Mechanisms of CuInS2 Conductivity Control of MOCVD-Grown ZnS Films Doped with I Donor and Na, N Acceptors Color Centers in Annealing of Neutron-Irradiated Type Ib and Ia Diamonds Influence of the Cobalt on the Electroluminescence Spectra of ZnO Optical Properties of Defects in Crystals (CdS) Plastically Deformed at 4.2-300 K Oxygen in Silicon Thermal Donor Formation and Mechanism of Enhanced Oxygen Diffusion in Silicon Heat-Treatment Centres and Thermal Donors in Silicon The NL 10 Thermal Donor in Silicon Endor Investigations on Heat Treatment Centers in Oxygen Rich Si Thermal Donor Formation in Boron Doped Silicon The Role of Nitrogen in the Formation of Oxygen-Related Thermal Donors in Silicon Calculated Thermodynamic Potentials for the Vacancy and the Oxygen A-Center in Silicon Nitrogen-Carbon-Oxygen Radiative Centers in Silicon: Uniaxial Stress Measurements Local Phonon Coupling Model for Anharmonic Lattice Excitation in Si: O Correlations between TD Annihilation and Oxygen Precipitation in Czochralski-Grown Silicon Influence of Silicide Growth on the Formation Rate of Thermal Donors in Silicon Atomic Geometry and Its Stability of Oxygen Impurities in Silicon Formation of Oxide Precipitates in Cz Grown Silicon New Thermal Donors and Processes Associated with Oxygen Clustering in Cz-Si at 600 Degrees C Novel Thermal Donors Generated in Cz Silicon by Prolonged Annealing at 470 Degrees C Defects in Heterostructures and Superlattices The Atomic Structure of GaAs/AlGaAs Interfaces and Its Correlation with the Optical Properties of Quantum Wells Photoionization of Deep Traps in AlGaAs/GaAs Quantum Wells Zinc and Sulphur in Silicon: Experimental Evidence for Kick-Out Diffusion Behaviour Diffusion and Solubility of Platinum in Silicon Self-Diffusion Mechanisms in Diamond, SiC, Si and Ge A New Model of Anomalous Phosphorus Diffusion in Silicon Diffusion and Solubility of Titanium in Silicon Diffusion of Cobalt in Silicon Superdiffusion of Zn into GaAs in an Array of GaAs/Zn/GaAs during Electron Irradiation at 50 DegreesC A Fast Diffusing Species in Silicon Crystals Strain Effects Induced by Gold Diffusion in Silicon Diffusion of Carbon-14 in Silicon Diffusion and Charge State of Hydrogen in Si Characterization of an Anion Antisite Defect as a Deep Double Donor in InP Optically Detected Magnetic Resonance Studies of Bound Exciton Triplets for Complex Defects in GaP Isotopic Effects in GaAs:Ni Deep Levels due to 4d- and 5d-Transition Element Impurties in III-V Semiconductors Determination of the FR3 Acceptor Level by Direct Excitation of the FR3 EPR in Undoped Semiinsulating GaAs Positron Annihilation Spectroscopy of the Native Vacancies in As-Grown GaAs Magnetic Circular Dichroism Investigation of the Neutral and the Ionized Manganese Acceptor in GaAs Interpretation of the Electric Field Dependent Thermal Emission Data of Deep Traps Optically Anisotropic Deep Luminescent Centers in GaAs Raman Spectroscopic Study of Si Local Vibrational Modes in GaAs Deep Donor-Acceptor Pair Recombination in Bulk GaP Studied by ODMR and DLTS Techniques High Resolution Measurements of the 3A2 - 3T2 Absorption Spectrum in V-Doped GaAs Group-IV Impurity Related Centers in GaAs The Effect of Deep Electron Traps on Luminescent Properties of VPE Te-Doped GaAs0.62P0.38 Epitaxial Layers Solubility of the Native Deep-Level Defect Typical of LPE-Grown AlGaAs Reduction of Capture Barrier Height of Pressure-Induced Deep Donors (DX Center)in GaAs:Si Degeneracy Factor and Pressure Dependence of Si-Induced Deep Impurity States in AlxGa1-xAs from Transport Experiments under Hydrostatic Pressure Magneto-Optical Investigations on Intrinsic Acceptors in GaAs Photoluminescence Uniaxial Stress Study of Fe2+ in InP Optical Absorption and EPR of V4+ in GaP Capture and Recombination Processes in Epitaxial Fe-Doped InP Incorporation of Si into GaAs Lattice Shallow Positron Traps in Gallium Arsenide A Novel PGa- Antisite Related Deep Isoelectronic Complex Defect in Gold- And Lithium-Doped GaP Phonon Scattering from V and Ni Centres in GaP and InP Neutral Complex (Au-Li) Defects in GaP The Relationship of Growth Conditions to Structural Defects of LPE-ALXGa1-XSb Field Dependence of Thermal Emission from Oxygen in GaP Hall Mobility Reduction due to Electron Scattering by Potential Fluctuation in Si-GaAs Photoluminescence Study of Fe2+ and Local Atomic Arrangements in In1-XGaXP Alloys Defect Structure in Laser Diodes Nonstoichiometry Related Acceptors in GaAs Hall Effects, DLTS and Optical Investigations on the Intrinsic 78/203 meV Acceptor in GaAs Dislocations and Microdefects in Bridgman GaAs Charge States of Hydrogen in p-Type and n-Type Silicon The Electronic Structure of Isolated Atomic Hydrogen or Muonium in Si and GaAs Electronic Structure of Hydrogen and Shallow Acceptor Complexes in Silicon Hydrogen Diffusion and Passivation of Shallow Impurities in Crystalline Silicon Semiempirical Electronic-Structure Calculations of Bond-Centered Interstitial Hydrogen in Silicon Hydrogen Diffusion and Shallow Acceptor Passivation in p-Type InP Infrared Study of the Passivation of Zinc Acceptors by Hydrogen in Indium Phosphide Symmetries of Hydrogen-Associated Centers in Silicon Hydrogen Passivation of Impurity-Related Defects in Germanium Off-Axis Motions and Distortions in Acceptor-H Complexes from Uniaxial Stress Studies Determination of Energy Level of Atomic H in Crystalline Silicon by Use of Hydrogenation of Radiation Defects Hydrogenation of GaAs during MBE Growth Identification of Microdefects Induced in Si after Hydrogen and Helium Plasma Treatments Isotope Studies of the Nature of IR-Active Center in c-Si:H(D) Thermal Stability of Acceptor-Hydrogen Pairs in Silicon Theory of Phosphorus-Hydrogen Complexes in Passivated Silicon Spontaneous Hydrogen Injection into Silicon Hydrogen Passivation of Donors and Acceptors in InP Two Electron D-State of DX-Centers The Deep Donor (DX Center) in GaAs: Determination of the Entropy Term in the Activation Energy The Vacancy-Interstitial Model of DX Centers The Double-Faced DX Center in AlxGa1-xAs Long Lived Resonance States in Si-Doped AlGaAs Luminescence of Tellurium Related Deep Center in GaAs under Hydrostatic Pressure Pressure Dependence of the DX Center in Al0.35Ga0.65As:Te Alloy Effects on Emission Rates for Deep Donors (DX Centers) in AlXGa1-XAs with Very Low AlAs Mole Fraction Fine Structure, Alloy Broadening and Multi-Peaks in DX Center Spectroscopy Capture Kinetics of the DX Center in GaAlAs:Si under High Pressure Metastability of Antisite Defects in GaAs under Negative Electron Affinity Persistent Photoluminescence of DX-Centers in Ga1-xAlxAs:Si Applications of Moessbauer Spectroscopy to Investigations of Defects in Semiconductors Magnetic Circular Dichroism Study of Electron-Irradiation Induced Defects in InP The Fate of Frenkel Pairs in Silicon and Germanium: What Do we Know about it? Positron Annihilation in Electron Irradiated Silicon The Influence of Germanium on the Formation and Annealing of Radiation Damage in Silicon IR Studies of Electron-Irradiated Aluminium-Doped Silicon The EPR Study of Inhomogeneous Deformations in Neutron-Irradiated Silicon Formation of Point Defect Clusters by Electron Irradiation in GaP, InAs and InP Formation of Defects in Ion Implanted Silicon during Rapid Isothermal Annealing Electron-Beam Epitaxy and Superdiffusion in Alloy Semiconductors by Electron-Beam Irradiation Positron Annihilation and Tem Study of Lattice Defects of Fusion Neutron Irradiated Silicon Neutrino-Recoil Experiments in Germanium Overlapping Deep Levels in Electron-Bombarded N-Type Silicon PAC-Study of Ternary Compound Formation by Ion Implantation Lattice Location of Ion Implanted Dopants in GaAs Using Radioactive Probes Depth Profile of Neutral Planar Tetravacancies in 3 MeV Phosphorus Implanted Silicon as Studied by EPR Fast Neutron Irradiation Induced Defects in High Purity Germanium The Removal Kinetis of Boron and Phosphorus Atoms from Substitutional Site in Si Caused by Interaction with Radiation Defects Moessbauer Study of the Electronic and Vibrational Properties of Implanted Te in GaAs and AlxGa1-xAs Defects in Silicon after Proton and Electron Irradiation Nuclear Magnetic Resonance Field Cycling: A New Defect Spectroscopy for III-V Semiconductors Studies of Electron-Hole Recombination Processes at Deep Levels in GaAs and GaP by Means of Transient Optical Absorption Spectroscopy A Novel Technique for the Investigation of the Interface State Energy Distribution in Schottky Contacts: Evaluation from the I-V Characteristics Transient Microwave Absorption Spectroscopy - Experimental Verification Study on the Dislocation Lines in Indium Doped GaAs Crystals by IR Scattering Tomography and Transmission Microscopy Photoluminescence and Optical Beam Induced Current Imaging of Defects Investigation of Stacking Faults in Silicon by Induced Current Methods Characterization of Deep Defects in Semi-Insulating GaAs by Capacitance and Conductance DLTS with Electrical and Optical Excitations Defect Alalysis in Semiconductors by Dechanneling Study of the Defect Depth Distribution in Heat Treated Si Wafers by X-Ray Topography Temperature Dependence of Absorption Coefficient in Silicon of Lower Purity Developement of a Scanning Minority Carrier Transient Spectroscopy Method: Application to the Study of Gold Diffusion in a Silicon Bicrystal Defect Analysis in SiO2/Si Structures by Electron Tunneling Defect and Impurity Studies in III-V Quantum Wells Using Fourier Transform Photoluminescence Spectroscopy Crystal Defect Study in III-V Compound Technology Multiphonon Recombination in Semiconductors Two-Electron Capture in Semiconductors with Deep Defects Influence of Dislocations on Galvanomagnetic and Optical Properties of GaAs Metastability of Electrical Properties of Dislocations in Silicon On the Nature of the Impurity Atmosphere around Dislocations in Bulk n-Type GaAs Effect of Impurities on Dislocation Activity in GaAs Magneto-Optics of Excitons Bound to Dislocations in CdS Deep Level Studies in GaAs-Ga0.5Al0.5As Superlattices Grown by MOCVD Manganese Levels in GaAs under Hydrostatic Pressure, in AlGaAs, and in GaAs/AlGaAs Quantum Wells - A Comparative Study Process Dependent Interface States of Ag/(110)GaAs Schottky Diodes Screening Effects and Density of States of Shallow Impurities in GaAs-(Ga,Al)As Quantum-Well Wires Transient Spectroscopy on Individual Defect Levels Pressure Dependence of Schottky Barrier Height at Pt/GaAs Interface Photoluminescence and Transmision Electron Microscopy of Defects in SiC Grown on Si Deep Levels in GaAs Mesfets Defects in MOS Technologies Lattice Deformation and Defect Structure of GaAs/Native Oxide Interfaces Influence of the Surface Layer Defects on the Conduction Mechanism in Semi-Insulating Gallium Arsenide Investigation of Trapping Properities in Simox Films by Photo-Induced Current Transient Spectroscopy Coherent Potential Approximation Calcutations of the Electronic Structure of Amorphous Silicon Influence of the Field Induced Doping Effect on the Density of States in Highly Doped N-Type a-Si:H Influence of the Defect Density of Amorphous Silicon at the Substrate Interface on the Schottky Barrier Characteristics Microinhomogeneities Characterized by Photocurrent Measurements and the Sem-Ebic Technique in Alpha-Si:H Layers

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詳細情報

• NII書誌ID(NCID): BA07665377
• ISBN:
  • 0878495843
  • 0878495843
  • 0878495843
• 出版国コード: sw
• タイトル言語コード: eng
• 本文言語コード: eng
• 出版地: Aederlmannsdorf, Switzwelns
• ページ数/冊数: 3 v.(1491 p.)
• 大きさ: 25 cm
• 分類:
  • NDC8 : 428.8
• 親書誌ID:
  • BA00294222