Site characterization and aggregation of implanted atoms in materials
著者
書誌事項
Site characterization and aggregation of implanted atoms in materials
(NATO advanced study institutes series, ser. B . Physics ; v. 47)
Plenum Press, c1980
並立書誌 全1件
大学図書館所蔵 全17件
  青森
  岩手
  宮城
  秋田
  山形
  福島
  茨城
  栃木
  群馬
  埼玉
  千葉
  東京
  神奈川
  新潟
  富山
  石川
  福井
  山梨
  長野
  岐阜
  静岡
  愛知
  三重
  滋賀
  京都
  大阪
  兵庫
  奈良
  和歌山
  鳥取
  島根
  岡山
  広島
  山口
  徳島
  香川
  愛媛
  高知
  福岡
  佐賀
  長崎
  熊本
  大分
  宮崎
  鹿児島
  沖縄
  韓国
  中国
  タイ
  イギリス
  ドイツ
  スイス
  フランス
  ベルギー
  オランダ
  スウェーデン
  ノルウェー
  アメリカ
注記
"Lectures presented at the NATO Advanced Study Institute, held in Aleria, Corsica, September 10-23, 1978." -- t.p. verso
Includes bibliographical references and index
内容説明・目次
内容説明
Explosive developments in microelectronics, interest in nuclear metallurgy, and widespread applications in surface science have all produced many advances in the field of ion implantation. The research activity has become so intensive and so broad that the field has become divided into many specialized subfields. An Advanced Study Institute, covering the basic and common phenomena of aggregation, seems opportune for initiating interested scientists and engineers into these various active subfields since aggregation usually follows ion implantation. As a consequence, Drs. Perez, Coussement, Marest, Cachard and I submitted such a pro posal to the Scientific Affairs Division of NATO, the approval of which resulted in the present volume. For the physicist studying nuclear hyperfine interactions, the consequences of aggregation of implanted atoms, even at low doses, need to be taken into account if the results are to be correctly interpreted. For materials scientists and device engineers, under standing aggregation mechanisms and methods of control is clearly essential in the tailoring of the end products.
目次
General Introduction.- I Basic Notions on Implantation.- Basic Implantation Processes.- Ion Implantation Procedure.- Radiation Damage as Probed by Impurities.- II Characterization by Nuclear Methods of Isolated Implanted Atom Sites.- Magnetic Hyperfine Interactions in Implanted Systems.- Quadrupole Interaction.- Isomer Shift and Recoilless Fraction.- Time Dependent Hyperfine Interactions.- Directional Distribution of Nuclear Gamma Radiation.- Nuclear Orientation.- NMR Detected by Nuclear Radiation: NMR/ON.- Mössbauer Spectroscopy.- Perturbed Angular Correlation.- Atom Site Characterization in Metals Using Channeling Techniques.- III Implantation Effects at Higher Concentrations, Aggregation Phenomena.- Radiation Effects in Metals.- Precipitation Processes in Implanted Materials.- Equilibrium Phase Formation by Ion Implantation.- Formation of Nonequilibrium Systems by Ion Implantation.- Perturbations of the Sputtering Yield.- IV Applicability of Solid State and Nuclear Methods.- to Some Solid State Methods for the Study of Isolated Implanted Atom Sites in Metals.- An Introduction to Several Solid State Techniques for the Study of Ion Implanted Materials.- Nuclear Methods for Studying Aggregation Problems.- Comparison Between Nuclear Physics Methods and Solid State Physics Methods for the Study of Implanted Atoms Sites in Metals: Solid State Methods.- Comparison of Nuclear Methods with Solid State Methods: Nuclear Methods.- V New Fields of Applications.- Surface Property Modification in Ion-Implanted Metals.- Implantation in Optical Materials.- A General Survey of the Panel Discussions.- Concluding Remarks.- Participants.
「Nielsen BookData」 より