Gallium arsenide and related compounds 1989 : proceedings of the Sixteenth International Symposium on Gallium Arsenide and Related Compounds held in Karuizawa, Japan, 25-29 September 1989
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Bibliographic Information
Gallium arsenide and related compounds 1989 : proceedings of the Sixteenth International Symposium on Gallium Arsenide and Related Compounds held in Karuizawa, Japan, 25-29 September 1989
（Institute of Physics conference series, no. 106）
Institute of Physics, c1990
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Institute of Materials and Systems for Sustainability, Nagoya University未来材料研
549.8||In41018105
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Description and Table of Contents
Description
These proceedings focus on the materials, devices and applications based on III-V compound and alloy semiconductors; GaAs, InP and other compounds, ternary and quarternary alloys. They report on the discussions that took place between researchers and engineers allowing a unique opportunity for them to discuss subjects from different aspects of the disciplines.
For researchers in III-V materials and related compounds.
Table of Contents
Plenary papers (2 papers). Bulk crystals (9 papers). Atomic layer epitaxy and metalorganic vapour phase epitaxy (13 papers). Molecular beam epitaxy (17 papers). Impurity and defect levels (17 papers). Properties of heterostructures and interfaces (20 papers). Characterization (9 papers) Process technologies (14 papers). High-speeed and high-frequency devices (20 papers). Optical devices (12 papers). Resonant tuneling and quantum size effects (15 papers). Late news papers (16 papers).
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