Physics of DX centers in GaAs alloys

Author(s)

• Bourgoin, J. C.

Bibliographic Information

Physics of DX centers in GaAs alloys

edited by J. C. Bourgoin

（Solid state phenomena, v. 10）

Sci-Tech Publications, c1990

Description and Table of Contents

Description

The DX center is a defect present in Gallium Arsenide and related alloys when these materials are doped with n-type impurities.

Table of Contents

Elaboration and n-Type Doping of GaAlAs Epitaxial Layers Band Structure of the GaAs/AlAs Solid Solutions Optically-Detected Magnetic Resonance of Si-Doped GaAlAs Photo-Hall Characterization in GaAlAs Thermal Emission Processes from DX Centers Carrier Capture Processes at DX Centers Studies of the DX Center Using Hydrostatic Pressure Radiative Recombination in GaxAl1-xAs Moessbauer Spectroscopy Studies of the DX Center Electron Paramagnetic Resonance Studies of the DX Center in GaAlAs The A1-T2 Transition of Substitutional Deep Impurities Review of DX Center Models Negative-U Aspects of DX-Center in Alx-Ga1-xAs A Critical View of DX Models DX Centers in Superlattices Passivation of the DX Center in AlGaAs by Hydrogen Plasma Exposure Local Structure of DX-Like Centers from Extended X-Ray Absorption Fine Structure

by "Nielsen BookData"

Details

• NCID: BA10850457
• ISBN:
  • 3908044057
• Country Code: lh
• Title Language Code: eng
• Text Language Code: eng
• Place of Publication: [Vaduz]
• Pages/Volumes: 295 p.
• Size: 25 cm.
• Parent Bibliography ID:
  • BA2175539X