Impurities, defects, and diffusion in semiconductors : bulk and layered structures : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A.
著者
書誌事項
Impurities, defects, and diffusion in semiconductors : bulk and layered structures : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A.
（Materials Research Society symposium proceedings, v. 163）
Materials Research Society, c1990
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注記
Includes bibliographical references
内容説明・目次
内容説明
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
目次
- Preface
- Acknowledgments
- Materials Research Society symposium proceedings
- Part I. Electronic Structure - Deep Levels
- Part II. Electronic Structure - Shallow Impurities
- Part III. Electronic Structures - Native Defects, Complexes, Transition Metals in Compounds
- Part IV. Electronic Structure - Complexes in Silicon
- Part V. Electronic Structure - Superlattices
- Part VI. Hydrogen in Silicon
- Part VII. Hydrogen in III-Vs
- Part VIII. Diffusion in Silicon and Germanium
- Part IX. Diffusion in Compounds
- Part X. Diffusion in Superlattices
- Part XI. DX Centers
- Part XII. EL2 Centers
- Part XIII. Doping in III-Vs
- Part XIV. Ordering in Alloys
- Part XV. Processing of Silicon and Germanium
- Part XI. Processing of Compounds
- Author index
- Subject index.
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