Defects in silicon : proceedings of Symposium B on Science and Technology of Defects in Silicon of the 1989 E-MRS Conference, Strasbourg, France, 30 May-2 June 1989
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書誌事項
Defects in silicon : proceedings of Symposium B on Science and Technology of Defects in Silicon of the 1989 E-MRS Conference, Strasbourg, France, 30 May-2 June 1989
（European Materials Research Society symposia proceedings, v. 9）
North-Holland, 1989
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注記
"Reprinted from Materials science & engineering, vol. B4(1/4)"--t.p. verso
内容説明・目次
内容説明
This volume reviews recent developments in the materials science of silicon. The topics discussed range from the fundamental characterization of the physical properties to the assessment of materials for device applications, and include: crystal growth; process-induced defects; topography; hydrogenation of silicon; impurities; and complexes and interactions between impurities. In view of its key position within the conference scope, several papers examine process induced defects: defects due to ion implantation, silicidation and dry etching, with emphasis being placed on the device aspects. Special attention is also paid to recent developments in characterization techniques on epitaxially grown silicon, and silicon-on-insulators.
目次
A selection of contents: Status and future of silicon crystal growth (W. Zulehner). Hydrogen in silicon: state, reactivity and evolution after ion implantation (G.F. Cerofolini, G. Ottaviani). Hydrogen passivation and thermal reactivation of zinc double acceptors in silicon (P. Stolz et al.). Radiative recombination channels due to hydrogen in crystalline silicon (L.T. Canham et al.). Hydrogenation of shallow and deep levels in silicon (A.E. Jaworowski, J.H. Robison). Transition metals in silicon and their gettering behaviour (K. Graff). 1.54 mm photoluminescence of erbium-implanted silicon (D. Moutonnet et al.). Quenched-in, fast-diffusing defects in silicon studied by the perturbed angular correlation method (U. Reislohner et al.). A study of carbon-implanted silicon for light-emitting diode fabrication (L.T. Canham et al.). The effect of phosphorus background concentration on the diffusion of tin, arsenic and antimony in silicon (A. Nylandsted Larsen et al.). Heavy metal contamination during integrated-circuit processing: measurements of contamination level and internal gettering efficiency by surface photovoltage (L. Jastrzebski). Activation and gettering of intrinsic metallic impurities during rapid thermal processing (B. Hartiti et al.). Effect of deformation-induced defects on the Fermi level position at recombination centers in n-Si (B. Pohoryles, A. Morawski). Effects of deuterium plasma treatments on the electrical properties of boron-doped silicon (A. Henry et al.). Formation of buried CoSi 2 layers by ion implantation, studied by Mossbauer spectroscopy and Rutherford backscattering spectroscopy (A. Vantomme et al.). Perturbed angular correlation spectroscopy of acceptor-donor pairs in silicon, germanium and GaAs (N. Achtziger et al.). Surface characterization of high-dose Sb + implanted rapid thermal annealed monocrystalline silicon (S.N. Kumar et al.). Substrate-damage-free laser recrystallization of polycrystalline silicon (R. Buchner et al.). Kinetics of silicon amorphization by N - implantation: dose rate and substrate temperature effects (A. Claverie et al.). Strain compensation effects on the annealing of Ge - -B - implanted silicon (A. Ferreiro et al.). RTA-induced defects: a comparison between lamp and electron beam techniques (E. Susi et al.). Thermal annealing of excimer-laser-induced defects in virgin silicon (B. Hartiti et al.). A uniaxial stress study of a copper-related photoluminescence band in silicon (K.G. McGuigan et al.). Thermal donors and oxygen-related complexes in silicon (T. Gregorkiewicz, H.H. Bekman). Defect-related gate oxide breakdown (W. Bergholz et al.). Reduction of process-induced defects in power devices (H.J. Schulze). Simulation of oxygen precipitation in Czochralski grown silicon (M. Schrems). High quality silicon-on-insulator substrates by implanted oxygen ions (J. Belz et al.). Photoluminescence of defects introduced by deuterium plasmas in silicon (H. Weman et al.).
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