Strained-Layer superlattices : materials science and technology
Author(s)
Bibliographic Information
Strained-Layer superlattices : materials science and technology
（Semiconductors and semimetals, vol. 33）
Academic Press, c1991
Available at / 57 libraries
-
The Institute for Solid State Physics Library. The University of Tokyo.図書室
428.41:S13:337210022914
-
No Libraries matched.
- Remove all filters.
Description and Table of Contents
Description
The following blurb to be used for the AP Report and ATI only as both volumes will not appear together there.****Strained-layer superlattices have been developed as an important new form of semiconducting material with applications in integrated electro-optics and electronics. Edited by a pioneer in the field, Thomas Pearsall, this volume offers a comprehensive discussion of strained-layer superlattices and focuses on fabrication technology and applications of the material. This volume combines with Volume 32, Strained-Layer Superlattices: Physics, in this series to cover a broad spectrum of topics, including molecular beam epitaxy, quantum wells and superlattices, strain-effects in semiconductors, optical and electrical properties of semiconductors, and semiconductor devices.****The following previously approved blurb is to be used in all other direct mail and advertising as both volumes will be promoted together.****Strained-layer superlattices have been developed as an important new form of semiconducting material with applications in integrated electro-optics and electronics. Edited by a pioneer in the field, Thomas Pearsall, this two-volume survey offers a comprehensive discussion of the physics of strained-layer superlattices (Volume 32), as well as detailing fabrication technology and applications of the material (Volume 33). Although each volume is edited to stand alone, the two books combine to cover a broad spectrum of topics, including molecular beam epitaxy, quantum wells and superlattices, strain-effects in semiconductors, optical and electrical properties of semiconductors, and semiconductor devices.
Table of Contents
R. Hull and J.C. Bean, Principles and Concepts of Strained-Layer Epitaxy. W.J. Schaff, P.J. Tasker, M.C. Foisy, and L.F. Eastman, Device Applications of Strained-Layer Epitaxy. S.T. Picraux, B.L. Doyle, and J.Y. Tsao, Structure and Characterization of Strained-Layer Superlattices. E. Kasper and F. Schaffler. Group IV Compounds. D.L. Partin, Molecular Beam Epitaxy of IV*b1VI Compound Heterojunctions and Superlattices. R.L. Gunshor, L.A. Kolodziejski, A.V. Nurmikko, and N. Otsuka, Molecular Beam Epitaxy of II*b1VI Semiconductor Microstructures. References. Index.
by "Nielsen BookData"
