Semi-insulating III-V materials, Toronto 1990 : proceedings of the 6th Conference on Semi-insulating III-V Materials, held in Toronto, Canada, 13-16 May, 1990
著者
書誌事項
Semi-insulating III-V materials, Toronto 1990 : proceedings of the 6th Conference on Semi-insulating III-V Materials, held in Toronto, Canada, 13-16 May, 1990
A. Hilger, 1991
- タイトル別名
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1990 6th Semi-insulating III-V Materials
90CH30130
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注記
Includes bibliographical references and index
"IEEE Catalog Number 90CH3013-0."
内容説明・目次
内容説明
Bulk and epitaxial growth, novel characterization techniques, "Back-gating" effects and the nature of defects and deep levels are covered in this volume of industrial and academic research papers. Applications are discussed, as well as the chemistry of compound semiconductors.
目次
Partial Precipitates and performance of GaAs analog and digital integrated circuits (S Martin et al). Carbon incorporation into LEC GaAs (P J Doering et al). The carbon and boron concentration control in GaAs crystals grown by liquid encapsulated Czochralski method (N Sato et al). The stoichiometry range of GaAs crystals (H Wenzl et al). Hydrogen passivation: relevance to semi-insulating III-V materials (A Y Polyakov et al). Whole wafer assessment of semi-insulating GaAs (J S Blakemore). Recombination mechanisms in semi-insulating GaAs studied by room-temperature photoluminescence mapping (H Ch Alt et al). Increased yield of microwave devices due to subsurface damage reduction in semi-insulating GaAs wafers (L C Shannon and D W Rogers). GaAs substrates: Issues for VLSI (L G Salmon). Uniformity of MESFETs fabricated on substrates from quenched and annealed LEC GaAs (D J Warner et al).
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