Shallow impurities in semiconductors : proceedings of the Fourth International Conference on Shallow Impurities in Semiconductors, King's College London, 31 July to 2 August 1990

著者

• Davies, Gordon

書誌事項

Shallow impurities in semiconductors : proceedings of the Fourth International Conference on Shallow Impurities in Semiconductors, King's College London, 31 July to 2 August 1990

editor Gordon Davies

（Materials science forum, v. 65 & 66）

Trans Tech Publications, c1991

内容説明・目次

内容説明

I. TECHNIQUES . II. d DOPING . III. QUANTUM WELLS . IV. HYDROGEN IN SEMICONDUCTORS . V. BOUND EXCITONS . VI. IMPURITIES IN SILICON . VII. IMPURITIES IN Ge AND GexSi1-x. VIII. IMPURITIES IN COMPOUND SEMICONDUCTORS . IX. DX CENTRES .

目次

Raman Spectroscopy of Dopant Impurities in Homogeneously and Planar ( ) Doped III-V Semiconductors Determination of Residual Donor Concentration by Selective Pair Luminescence in Semi-Insulating GaAs Dynamics of Selectively Excited Donor Acceptor Pairs in GaAs A New Technology of Boron Diffusion into Silicon by Rapid Thermal Processing Control of Shallow Boron Profile in Silicon Photoionization Cross-Section Spectra of Shallow Acceptors in Semiconductors: Effect of a Change in Heavy - to Light-Hole Mass Ratio Electron-Hole Mechanism of Migration and Defect Interaction Delta-Doping in III-V Semiconductors Optical Interband Transitions in Single and Periodically Delta-Doped GaAs Samples Photoluminescence and Excitation Study of Delta Doped GaAs Shallow Impurity Bands in -Doped Quantum Wells Quantum Transport Studies of Atomic Plane (Spike) Doping in InSb and InAs Bound Excitons in Quantum Wells Excited Shallow Impurity States in Quantum Well Structures: Correspondences between the Low-Field and High-Field Limits Time Resolved Far Infra-Red Magnetospectroscopy in GaAs/AlGaAs MQWs Polarized Luminescence Study of Shallow Acceptors in Short-Period Superlattices Excited-State Spectroscopy of Shallow Donor Impurities in GaAs/AlGaAs Multi-Quantum Wells Two-Dimensional D- States in Selectively Doped GaAs-GaAlAs Multi-Quantum Wells Infrared Absorption Coefficient for Shallow Donors in a Quantum Well Optical Absorption Spectra Associated to Shallow Impurities in GaAs-(Ga,Al)As Quantum Well Wires Microscopic Properties of Hydrogen Passivated Shallow Impurities in Semiconductors Sulfur-Hydrogen Donor Complexes in Silicon Photothermal Ionization Studies of Effective Mass-Like Hydrogen-Related Donors in Silicon Valence Force Models as a Test of Atomic Models Hydrogen-Impurity Complexes in GaAs An Investigation of the 78/203 meV Double Acceptor in GaAs Including the Effects of Hydrogen Passivation Diffusion of Deuterium in ZnHgTe and CdHgTe as a Function of Composition Ultra-High Resolution Photoluminescence Studies of Bound Excitons and Multi-Bound Exciton Complexes in Silicon Host-Lattice Isotope Dependence of Acceptor Bound-Exciton Luminescence in Diamond Fine Structure of Bound Exciton Luminescence in Uniaxially Stressed Si:B New Features in the Photoluminescence Spectra of Bound Multiexciton Complexes in Uniaxially Stressed Boron Doped Silicon Photoluminescence Excitation Spectroscopy of Donors in Ge Lattice Distortions and Exciton Bound to Nitrogen in GaP-Rich A3B5 Alloys Binding of Excitons around Hg Atoms in ZnxHg1-x Te and CdxHg1-xTe Alloys Shallow Acceptor Bound-Excitons in CdTe Epitaxial Layers on (100) GaAs Magneto-Transport in Stressed Si:B in the Localization Regime Aluminum Related Thermally Induced Defects in Silicon Shallow Copper-Related Complexes in P-Type Silicon The Electron Structure and Spectra of Shallow Non-Hydrogenlike Impurities in Semiconductors. II. Acceptors in Silicon Interaction of Phosphorus with Dislocation Cores in Silicon Relaxation of Extrinsic Excitation in Si Doped with III and V Group Impurities Iron- and Chromium-Indium Pairs in Silicon Ab Initio Calculations on Interstitial O Clusters in Si Diffusion of Groups -IV and -V Impurities in Silicon at High Donor Concentrations: A Comparison between Experimental and Theoretical Results Energy States of Shallow and Deep Impurities and Processes of Optical Transitions, Scattering and Current Carrier Capture in Ge and Si On the Interplay between Vacancies and Interstitial Clusters in CZ-Grown Silicon The p3/2' Fano and Piezo-Fano Spectra of Singly Ionised Zinc Impurity in Germanium Spectroscopy of Transitions to Coulomb-Related Landau States in Germanium Spectral Dependence of the Shallow Impurity Optical Absorption Cross Section in Germanium Resonance States of a Shallow Acceptor in Degenerate Anisotropic Band Semiconductor Bistability of Thermal Donors in Germanium Investigated by Far-IR Spectroscopy Shallow Impurity Spectroscopy Using Cyclotron Resonance Lasers The Influence of Metallic Contamination on the Lattice Relaxation of GexSi1-x Epitaxial Alloys Impurity Photoconductivity in GexSi1-x Epitaxial Layers Doped with Phosphorus A FIR Photo-Hall Study of the 1s-2p-1 Shallow Donor Transition in n-GaAs Electronic Structure of Be-Doped GaAs High Resolution Magneto-Optical Studies of the Donors in MOCVD InP Far Infrared Magneto-Optical Studies of Free and Bound Carriers in High Purity MBE InAs The Shallow Doping Properties of Mercury Cadmium Telluride as Grown by Molecular Beam Epitaxy Electron Paramagnetic Resonance of the Shallow Si Donor in Indirect GaAs/AlxGa1-xAs Heterostructures Electron Beam Doping of Zn into GaAs in an Array of GaAs/Zn/GaAs Pressure and Light Induced Metastability Effects near the Magnetic Field Inudced Metal Insulator Transition in n-GaAs Characterization of Fast Neutron Irradiated GaAs Films by Photoluminescence Spectroscopy Thermodynamic Study of Annealing Process of Si-Implanted GaAs Theoretical Description of Donor Bistability in CdF2 DX-Like Centres in Semiconductors: Metastability, Bistability and Negative U Magneto-Optical Investigations of DX Centres in AlxGa1-xAs Localized Electronic States with A1 Symmetry of Substitutional Impurities - are they DX Centres? Photo-Ionization and Metastability of the DX Center in GaAlAs Alloys DX-Centers in Silicon -Doped GaAs and AlxGa1-xAs? Tunable Apparition of the DX-Linked Level by Photoexcitation in AlGaAs in Magnetic Freezeout Experiments under Hydrostatic Pressure Shallow States of the DX Centre in AlGaAs: Sn Probed by Admittance Spectroscopy

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詳細情報

• NII書誌ID(NCID): BA11883972
• ISBN:
  • 087849619X
• 出版国コード: sz
• タイトル言語コード: eng
• 本文言語コード: eng
• 出版地: Aedermannsdorf, Switzerland
• ページ数/冊数: 476 p.
• 大きさ: 25 cm
• 親書誌ID:
  • BA00294222