Silicon molecular beam epitaxy : proceedings of the 3rd International Symposium on Silicon Molecular Beam Epitaxy, Symposium A of the 1989 E-MRS Conference, Strasbourg, France, 30 May-2 June 1989
著者
書誌事項
Silicon molecular beam epitaxy : proceedings of the 3rd International Symposium on Silicon Molecular Beam Epitaxy, Symposium A of the 1989 E-MRS Conference, Strasbourg, France, 30 May-2 June 1989
（European Materials Research Society symposia proceedings, v. 10A,
North-Holland
- Pt. A
- Pt. B
- 統一タイトル
-
Thin solid films
大学図書館所蔵 件 / 全5件
-
該当する所蔵館はありません
- すべての絞り込み条件を解除する
注記
"Reprinted from Thin solid films, vol. 183 (1-2)"--Pt. A, t.p. verso
"Reprinted from Thin solid films, vol. 184 (1-2)"--Pt. B, t.p. verso
Includes bibliographical references and indexes
内容説明・目次
内容説明
This two-volume work covers recent developments in the single crystal growth, by molecular beam epitaxy, of materials compatible with silicon, their physical characterization, and device application. Papers are included on surface physics and related vacuum synthesis techniques such as solid phase epitaxy and ion beam epitaxy. A selection of contents: Volume I. SiGe Superlattices. SiGe strained layer superlattices (G. Abstreiter). Optical properties of strained GeSi superlattices grown on (001)Ge (T.P. Pearsall et al.). Growth and characterization of SiGe atomic layer superlattices (J.-M. Baribeau et al.). Optical properties of perfect and imperfect SiGe superlattices (K.B. Wong et al.). Confined phonons in stained short-period (001) Si/Ge superlattices (W. Bacsa et al.). Calculation of energies and Raman intensities of confined phonons in SiGe strained layer superlattices (J. White et al.). Rippled surface topography observed on silicon molecular beam epitaxial and vapour phase epitaxial layers (A.J. Pidduck et al.). The 698 meV optical band in MBE silicon (N. de Mello et al.). Silicon Growth Doping.
「Nielsen BookData」 より