Gallium arsenide and related compounds 1990 : proceedings of the Seventeenth International Symposium on Gallium Arsenide and Related Compounds held in Jersey, Channel Islands, 24-27 September 1990
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書誌事項
Gallium arsenide and related compounds 1990 : proceedings of the Seventeenth International Symposium on Gallium Arsenide and Related Compounds held in Jersey, Channel Islands, 24-27 September 1990
（Institute of Physics conference series, no. 112）
Institute of Physics, c1990
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注記
Includes bibliographical references and index
内容説明・目次
内容説明
The 17th International Symposium on Gallium Arsenide and related Compounds was held in Jersey, Channel Islands, on 24 - 27 September 1990. This volume contains a total of 112 papers, including four invited papers and a number of late news papers. The papers are divided into eight chapters relating to various aspects of the subject. These include bulk and epitaxial growth, characterization, processing, electron transport, and both high speed and opto-electronic devices. Current research and recent developments in these areas are covered. Particularly apparent is the increasing importance of III-V devices. These proceedings will be invaluable to researchers in solid state semiconductor and device physics, both in industry and academia, as they represent the latest developments in this exciting and rapidly developing field.
目次
Mesoscopic devices where electrons behave like light (A J Holden). Analog and microwave monolithic III-V ICs: industrial and technical aspects (S Gourrier). Digital GaAs microelectronics: manufacturing and applications (A Prabhakar and S A Roosild). Applications of bistable laser diodes (S Yamakoshi). Bulk growth (4 papers). Epitaxial growth (24 papers). Characterization (9 papers). Processing (16 papers). Electron transport (9 papers). High speed devices (27 papers). Opto-electronic devices (19 papers). Author index.
blurb
The 17th International Symposium on Gallium Arsenide and related Compounds was held in Jersey, Channel Islands, on 24 - 27 September 1990. This volume contains a total of 112 papers, including four invited papers and a number of late news papers. The papers are divided into eight chapters relating to various aspects of the subject. These include bulk and epitaxial growth, characterization, processing, electron transport, and both high speed and opto-electronic devices. Current research and recent developments in these areas are covered. Particularly apparent is the increasing importance of III-V devices. These proceedings will be invaluable to researchers in solid state semiconductor and device physics, both in industry and academia, as they represent the latest developments in this exciting and rapidly developing field.
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