CiNii 図書 - Very high speed MOS devices

This comprehensive work describes very high speed and very high performance MOS devices which are mainstream technologies in VLSI and ULSI research. The book is wide ranging, its scope covering basic subjects through to a variety of applications. All the authors are researchers and engineers from the Toshiba Corporation, a world leader in MOS device technology, especially in the CMOS area, and so leading technologies and supporting knowledge are thoroughly reviewed. The book begins with a review of the concept and historical background of MOS devices, followed by their basic operating principles and physical characteristics. Process and device tchnologies aiming at submicron-scale devices, simulation and CAD and circuit design for both logic and memory LSIs are explained in detail, using many diagrams and actual data. In particular, high speed MOS devices are considered at the system level, rather than the individual device or component level, in the achievement of overall high system speed and performance. Future trends and issues in MOS technology, including three-dimensional LSIs, are also described.

Part 1 Introductory remarks: history of MOS devices
operating principle and scaling of MOSFETs
high speed MOS and large scale integration
the fabrication process for MOS devices. Part 2 Foundations and physics of MOS devices: miniaturized MOSFETs
carrier injection into oxide and substrate - reliability of MOSFETs
CMOS latchup
limitations of MOS device characteristics. Part 3 Process integration for MOS devices: MOS device structures
technologies for CMOS device fabrication
MOS device reliability and failure analysis
trends of MOS device and process integration. Part 4 BiCMOS devices: BiCMOS structure
device characteristics
speed performance
future trends. Part 5 Simulation technology: process simulation
device simulation
circuit simulation
logic simulation
future perspectives. Part 6 MOS logic devices: circuit design of CMOS logic VLSIs
logic design of logic VLSIs
the future of MOS logic VLSI. Part 7 MOS memory devices: RAM
ROM
application specific memory
high performance MOS memory design
testing large capacity RAM
future trends. Part 8 Future directions and technical issues of MOS devices: cryogenic operation
silicon on sapphire (SOS)
SOI and three-dimensional ICs
wafer scale integration technology
future technology - trends and issues.

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Very high speed MOS devices

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