Wide gap II-VI semiconductors : proceedings of the E-MRS Advanced Research Workshop, Montpellier, 16-18 January, 1991
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書誌事項
Wide gap II-VI semiconductors : proceedings of the E-MRS Advanced Research Workshop, Montpellier, 16-18 January, 1991
Adam Hilger, c1991
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注記
Includes bibliographical references
内容説明・目次
内容説明
Wide Gap II-VI Semiconductors presents the proceedings of the E-MRS Advanced Research Workshop which was held at Montpellier between 16-18 January 1991. These proceedings will stimulate ideas and interest for the future development of the wide bandgap II-VI compounds and major new device applications. To this end, contributions from some 70 scientists (mainly from France, Germany and the UK, but also, and most importantly, a few leading USA and Japanese researchers) discuss and examine the potential of the II-VIs, especially ZnSe and related materials, as blue light emitters and laser diodes. The current status of the role of these materials is the subject of considerable interest and is featured in two lively round table discussion papers: 'Doping in II-VIs' and 'Practical devices for blue emission'. In the face of major research programmes on II-VI compounds in the USA and Japan, this volume explores European research and new initiatives in this field. Wide Gap II-VI Semiconductors is an essential record of the present state of research and of the factors governing the future. The papers presented here are reprinted from Semiconductor Science and Technology (1991, Volume 6, Number 9a), an Institute of Physics journal.
目次
Hetero- and multi-quantum well structures in wide-gap II-VI semiconductors (M Averous et al). MBE growth of the (Zn,Cd) (Se,Te) system for wide-bandgap heterostructure lasers (M C Tamargo et al). Epitaxial growth of ZnSe for blue emission - current research in Japan (H Kukimoto). The growth of bulk ZnSe crystals (R Triboulet). Application of a new theoretical transport study to the assessment of the purity of ZnSe (O Briot et al). The growth of ZnSe and other wide-bandgap II-VI semiconductors by MOCVD (P J Wright et al). New precursors for wide-gap II-VI semiconductors (A C Jones). Optical and electro-optical properties of II-VI quantum dots (F Henneberger et al). Optical properties of II-VI epitaxial layers (G Gutowski). Light-induced effects on the growth and doping of wide-bandgap II-VI compounds (Y Marfaing). ZnSe switching and logic devices and their application to information processing (B S Wherrett). Poster papers (19 papers). Round table discussions (2 papers).
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