Proceedings of the Second Symposium on Defects in Silicon : defects in silicon II

Author(s)

• Symposium on Defects in Silicon
• Bullis, W. Murray
• Gösele, Ulrich
• Shimura, Fumio
• Electrochemical Society. Electronics Division
• Electrochemical Society. Dielectric Science and Technology Division

Bibliographic Information

Proceedings of the Second Symposium on Defects in Silicon : defects in silicon II

edited by W. Murray Bullis, Ulrich Gösele, Fumio Chimura ; assistant editors, W. Bergholz ... [et al.] ; Electronics and Dielectric Science and Technology Divisions

（Proceedings / [Electrochemical Society], v. 91-9）

Electrochemical Society, c1991

Note

Includes bibliographical references and indexes

Details

• NCID: BA13248137
• LCCN: 91075566
• Country Code: us
• Title Language Code: eng
• Text Language Code: eng
• Place of Publication: Pennington, NJ (10 S. Main St., Pennington 08534-2896)
• Pages/Volumes: xi, 692 p.
• Size: 23 cm
• Classification:
  • LCC : QC611.8.S5
  • DC19 : 621.381/73
• Subject Headings:
  • LCSH : Silicon -- Defects -- Congresses
  • LCSH : Semiconductors -- Defects -- Congresses
• Parent Bibliography ID:
  • BA01323290